Ordering number : ENA1458A ATP405 N-Channel Power MOSFET ATP405 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 100 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =100V, V =0V 10 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 2.0 3.5 V GS DS D Forward Transfer Admittance yfs V =10V, I =20A 62 S DS D Static Drain-to-Source On-State Resistance R (on) I =20A, V =10V 25 33 m DS D GS Input Capacitance Ciss 4000 pF Output Capacitance Coss V =20V, f=1MHz 300 pF DS Reverse Transfer Capacitance Crss 170 pF Turn-ON Delay Time t (on) 38 ns d Rise Time t 125 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 220 ns d Fall Time t 150 ns f Total Gate Charge Qg 68 nC Gate-to-Source Charge Qgs V =60V, V =10V, I =40A 14 nC DS GS D Gate-to-Drain Miller Charge Qgd 15 nC Diode Forward Voltage V I =40A, V =0V 0.9 1.2 V SD S GS Switching Time Test Circuit Avalanche Resistance Test Circuit V V =60V IN DD 10V 0V L I =20A D V IN R =3 L 50 D V OUT PW=10s ATP405 D.C.1% 10V G 50 V DD 0V ATP405 P.G 50 S Ordering Information Device Package Shipping memo ATP405-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1458-2/7