X-On Electronics has gained recognition as a prominent supplier of ATP602-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. ATP602-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ATP602-TL-H ON Semiconductor

ATP602-TL-H electronic component of ON Semiconductor
ATP602-TL-H ON Semiconductor
ATP602-TL-H MOSFETs
ATP602-TL-H  Semiconductors

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See Product Specifications
Part No. ATP602-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N-CH 600V 5A ATPAK
Datasheet: ATP602-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
465: USD 0.9204 ea
Line Total: USD 427.99 
Availability - 0
MOQ: 465  Multiples: 465
Pack Size: 465
Availability Price Quantity
0
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.6678

0
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 465
Multiples : 465
465 : USD 0.9204

   
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RoHS - XON
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We are delighted to provide the ATP602-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ATP602-TL-H and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENA1543A ATP602 N-Channel Power MOSFET ATP602 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =10mA, V =0V 600 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =480V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 3 5 V GS DS D Forward Transfer Admittance yfs V =10V, I =2.5A 1.5 2.9 S DS D Static Drain-to-Source On-State Resistance R (on) I =2.5A, V =10V 2.1 2.7 DS D GS Input Capacitance Ciss 350 pF Output Capacitance Coss V =30V, f=1MHz 68 pF DS Reverse Transfer Capacitance Crss 15 pF Turn-ON Delay Time t (on) 14.2 ns d Rise Time t 37.4 ns r See Fig.2 Turn-OFF Delay Time t(off) 36.2ns d Fall Time t 20.4 ns f Total Gate Charge Qg 13.6 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =5A 3.4 nC DS GS D Gate-to-Drain Miller Charge Qgd 7.2 nC Diode Forward Voltage V I =5A, V =0V 0.9 1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =200V DD IN 10V L 0V I =2.5A D 50 R =80 L RG V OUT V IN D ATP602 PW=10s 10V D.C.0.5% 50 V DD G 0V S P.G R =50 ATP602 GS Ordering Information Device Package Shipping memo ATP602-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1543-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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