STL22N65M5 Datasheet N-channel 650 V, 180 m typ., 15 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package Features 5 V T R max. I Order code DS Jmax DS(on) D 4 3 2 STL22N65M5 710 V 210 m 15 A 1 PowerFLAT 8x8 HV Extremely low R DS(on) Drain(5) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Gate(1) Type A Driver source(2) Applications Power source(3, 4) Switching applications D(5) Description G(1) Type C This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly S(2,3,4) suitable for applications requiring high power and superior efficiency. NG1DS2PS34D5 DBL Product status link STL22N65M5 Product summary Order code STL22N65M5 Marking 22N65M5 Package PowerFLAT 8x8 HV Packing Tape and reel DS9209 - Rev 4 - February 2021 www.st.com For further information contact your local STMicroelectronics sales office.STL22N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 15 C I A D Drain current (continuous) at T = 100 C 9.5 C (1) I Drain current (pulsed) 60 A DM P Total power dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 15 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 1.14 C/W thJA (1) R Thermal resistance, junction-to-board 45 C/W thJB 1. When mounted on an 1-inch FR-4, 2oz Cu board Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 4 A AR (2) E Single pulse avalanche energy 270 mJ AS 1. Pulse width limited by T jmax 2. Starting T = 25 C, I = I , V = 50 V j D AR DD DS9209 - Rev 4 page 2/17