STL24N60DM2 STMicroelectronics

STL24N60DM2 N-channel 600 V, 0.195 typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V T R max. I DS Jmax DS(on) D STL24N60DM2 650 V 0.220 15 A 5 4 Fast-recovery body diode 3 2 Extremely low gate charge and input 1 capacitance Low on-resistance 100% avalanche tested PowerFLAT 8x8 HV Extremely high dv/dt ruggedness Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STL24N60DM2 24N60DM2 PowerFLAT 8x8 HV Tape and reel July 2016 DocID026017 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STL24N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT8x8 HV package information ........................................ 10 4.2 PowerFLAT8x8 HV packaging information ..................................... 12 5 Revision history ............................................................................ 14 2/15 DocID026017 Rev 3