STL26NM60N STMicroelectronics

STL26NM60N N-channel 600 V, 0.160 typ., 19 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V R max I DS DS(on) D STL26NM60N 600 V 0.185 19 A 5 4 100% avalanche tested 3 2 Low input capacitance and gate charge 1 Low gate input resistance Applications PowerFLAT 8x8 HV Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STL26NM60N 26NM60N PowerFLAT 8x8 HV Tape and reel December 2016 DocID18472 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STL26NM60N Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 8x8 HV package information ....................................... 10 4.2 PowerFLAT 8x8 HV packing information ........................................ 12 5 Revision history ............................................................................ 14 2/15 DocID18472 Rev 3