STL33N65M2 STMicroelectronics

STL33N65M2 N-channel 650 V, 0.124 typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code V R max I DS DS(on) D STL33N65M2 650 V 0.154 20 A 5 4 Extremely low gate charge 3 2 Excellent output capacitance (C ) profile OSS 1 100% avalanche tested Zener-protected PowerFLAT 8x8 HV Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STL33N65M2 33N65M2 PowerFLAT 8x8 HV Tape and reel April 2016 DocID026089 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STL33N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 8x8 HV package information .................................... 10 4.2 PowerFLAT 8x8 HV packing information ..................................... 12 5 Revision history ............................................................................ 14 2/15 DocID026089 Rev 3