STL36N60M6 STMicroelectronics

STL36N60M6 Datasheet N-channel 600 V, 91 m typ., 25 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package Features V R max. I Order code DS DS(on) D 5 STL36N60M6 600 V 110 m 25 A 4 3 Reduced switching losses 2 1 Lower R x area vs previous generation DS(on) Low gate input resistance PowerFLAT 8x8 HV 100% avalanche tested Zener-protected Drain(5) Excellent switching performance thanks to the extra driving source pin Applications Switching applications Gate(1) LLC converters Boost PFC converters Driver Power source (2) source (3, 4) Description NG1DS2PS34D5Z The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) Product status link one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. STL36N60M6 Product summary Order code STL36N60M6 Marking 36N60M6 Package PowerFLAT 8x8 HV Packing Tape and reel DS11134 - Rev 4 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STL36N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 25 A D C I Drain current (continuous) at T = 100 C 15.6 A D C (1) I Drain current (pulsed) 100 A DM P Total dissipation at T = 25 C 160 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 25 A, di/dt 400 A/s V < V , V = 400 V. SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.78 C/W thj-case (1) R Thermal resistance junction-pcb 45 C/W thj-pcb 1. When mounted on FR-4 board of inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy (starting T = 25 C, I = I j D AR E 750 mJ AS V = 50 V) DD DS11134 - Rev 4 page 2/15