Advance Technical Information TM X-Class HiPerFET V = 1000V IXFT26N100XHV DSS Power MOSFET I = 26A IXFH26N100X D25 R 320m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 1000 V DSS J D (Tab) V T = 25 C to 150 C, R = 1M 1000 V DGR J GS TO-247 V Continuous 30 V GSS (IXFH) V Transient 40 V GSM T = 25 C26A I D25 C I T = 25 C, Pulse Width Limited by T 52 A DM C JM G D I T = 25 C8A S D (Tab) A C E T = 25 C2J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain P T = 25 C 860 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in d High Voltage Package Weight TO-268HV 4 g Low R and Q DS(ON) G TO-247 6 g Avalanche Rated Low Package Inductance Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 1mA 1000 V DSS GS D Applications V V = V , I = 4mA 3.5 6.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 25 A DSS DS DSS GS PFC Circuits T = 125C 3 mA J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 320 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100935A(9/18) IXFT26N100XHV IXFH26N100X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 11 18 S fs DS D D25 R Gate Input Resistance 0.50 Gi C 3290 pF iss C V = 0V, V = 25V, f = 1MHz 620 pF oss GS DS C 30 pF rss Effective Output Capacitance C 120 pF o(er) Energy related V = 0V GS C 480 pF V = 0.8 V o(tr) Time related DS DSS t 29 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 62 ns d(off) R = 3 (External) G t 8 ns f Q 113 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 23 nC gs GS DS DSS D D25 Q 55 nC gd R 0.145 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 26 A S GS I Repetitive, pulse Width Limited by T 104 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 220 ns rr I = 13A, -di/dt = 100A/ s F Q 1.8 C RM V = 100V R I 16.3 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537