X-On Electronics has gained recognition as a prominent supplier of IXFH26N100X MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH26N100X MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFH26N100X IXYS

IXFH26N100X electronic component of IXYS
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Part No.IXFH26N100X
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 1000V 26A TO-247 Power MOSFET
Datasheet: IXFH26N100X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.8631 ea
Line Total: USD 19.86 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 19.8631
10 : USD 18.2579
30 : USD 17.5019
120 : USD 15.41
510 : USD 13.7116
1020 : USD 12.4584
2520 : USD 12.0339

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFH26N100X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH26N100X and other electronic components in the MOSFETs category and beyond.

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Advance Technical Information TM X-Class HiPerFET V = 1000V IXFT26N100XHV DSS Power MOSFET I = 26A IXFH26N100X D25 R 320m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 1000 V DSS J D (Tab) V T = 25 C to 150 C, R = 1M 1000 V DGR J GS TO-247 V Continuous 30 V GSS (IXFH) V Transient 40 V GSM T = 25 C26A I D25 C I T = 25 C, Pulse Width Limited by T 52 A DM C JM G D I T = 25 C8A S D (Tab) A C E T = 25 C2J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain P T = 25 C 860 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in d High Voltage Package Weight TO-268HV 4 g Low R and Q DS(ON) G TO-247 6 g Avalanche Rated Low Package Inductance Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 1mA 1000 V DSS GS D Applications V V = V , I = 4mA 3.5 6.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 25 A DSS DS DSS GS PFC Circuits T = 125C 3 mA J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 320 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100935A(9/18) IXFT26N100XHV IXFH26N100X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 11 18 S fs DS D D25 R Gate Input Resistance 0.50 Gi C 3290 pF iss C V = 0V, V = 25V, f = 1MHz 620 pF oss GS DS C 30 pF rss Effective Output Capacitance C 120 pF o(er) Energy related V = 0V GS C 480 pF V = 0.8 V o(tr) Time related DS DSS t 29 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 62 ns d(off) R = 3 (External) G t 8 ns f Q 113 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 23 nC gs GS DS DSS D D25 Q 55 nC gd R 0.145 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 26 A S GS I Repetitive, pulse Width Limited by T 104 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 220 ns rr I = 13A, -di/dt = 100A/ s F Q 1.8 C RM V = 100V R I 16.3 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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