BSC027N10NS5ATMA1 Infineon

BSC027N10NS5 MOSFET TM PG-TSON-8-3 OptiMOS Power-Transistor, 100 V 8 7 5 6 6 Features 7 5 8 Optimized for high performance SMPS, e.g. sync. rec. Pin 1 100% avalanche tested 2 4 3 3 Superior thermal resistance 4 2 1 N-channel Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 175C rated Product validation Fully qualified according to JEDEC for Industrial Applications S1 8D S2 7D Table 1 Key Performance Parameters S3 6D Parameter Value Unit G4 5D V 100 V DS R 2.7 m DS(on),max I 194 A D Q oss 114 nC Q G(0V..10V) 89 nC Type / Ordering Code Package Marking Related Links BSC027N10NS5 PG-TSON-8-3 027N10N - Final Data Sheet 1 Rev. 2.1, 2020-11-26TM OptiMOS Power-Transistor , 100 V BSC027N10NS5 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.1, 2020-11-26