STL42N65M5 STMicroelectronics

STL42N65M5 N-channel 650 V, 0.070 , 34 A MDmesh V Power MOSFET in PowerFLAT 8x8 HV package Datasheet preliminary data Features V R DSS DS(on) Order code I 3 WOTTOM VIE D T max Jmax 3 3 (1) STL42N65M5 710 V < 0.079 34 A 1. The value is rated according to R thj-case 100% avalanche tested Low input capacitance and gate charge 4 X (6 ER&, W O 0 Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. 3 - V Table 1. Device summary Order code Marking Package Packaging STL42N65M5 42N65M5 PowerFLAT 8x8 HV Tape and reel April 2012 Doc ID 17443 Rev 2 1/14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 14 change without notice. Contents STL42N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Test circuits 6 4 Package mechanical data . 7 5 Packaging mechanical data 11 6 Revision history . 13 2/14 Doc ID 17443 Rev 2