STL45N60DM6 STMicroelectronics

STL45N60DM6 Datasheet N-channel 600 V, 0.094 typ., 25 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package Features V R max. I Order code DS DS(on) D 5 STL45N60DM6 600 V 0.110 25 A 4 3 Fast-recovery body diode 2 1 Lower R per area vs previous generation DS(on) Low gate charge, input capacitance and resistance PowerFLAT 8x8 HV 100% avalanche tested Extremely high dv/dt ruggedness Drain(5) Zener-protected Applications Gate(1) Switching applications Driver Power source (2) Description source (3, 4) NG1DS2PS34D5Z This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STL45N60DM6 Product summary Order code STL45N60DM6 Marking 45N60DM6 Package PowerFLAT 8x8 HV Packing Tape and reel DS11670 - Rev 5 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL45N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 25 A C I D Drain current (continuous) at T = 100 C 16 A C (1) I Drain current (pulsed) 95 A DM P Total power dissipation at T = 25 C 160 W TOT C (2) dv/dt Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/s di/dt (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 25 A, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.78 C/W thj-case (1) R Thermal resistance junction-pcb 45 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) AR jmax 6 A E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 630 mJ AS J D AR DD DS11670 - Rev 5 page 2/14