DMN2450UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BV R DSS DS(ON) T = +25C Very Low Gate Threshold Voltage, 1.0V Max A 0.6 V = 4.5V Low Input Capacitance GS 0.9A Fast Switching Speed 0.8 V = 2.5V 0.7A GS 20V ESD Protected Gate 1.0 V = 1.8V GS 0.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 1.6 V = 1.5V GS 0.3A Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: X1-DFN1212-3 resistance (RDS(ON)) and yet maintain superior switching Case Material: Molded Plastic UL Flammability Classification performance, making it ideal for high efficiency power management Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe Power Management Functions e4 Solderable per MIL-STD-202, Method 208 Battery Operated Systems and Solid-State Relays Terminal Connections: See Diagram Load Switch Weight: 0.005 grams (Approximate) D G Gate Protection S ESD PROTECTED Diode Top View Bottom View Equivalent Circuit Pin-out Top View Ordering Information (Note 4) Part Number Case Packaging DMN2450UFD-7 X1-DFN1212-3 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2450UFD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 0.9 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 0.7 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 3.0 A I DM Maximum Body Diode Forward Current (Note 6) 0.8 A I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.45 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 280 C/W R JA Total Power Dissipation (Note 6) P 0.89 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 140 C/W R JA Thermal Resistance, Junction to Case (Note 6) 112 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 1.0 A V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.45 1.0 V V = V , I = 250A GS(TH) DS GS D 0.35 0.6 VGS = 4.5V, ID = 200mA 0.45 0.8 V = 2.5V, I = 200mA GS D Static Drain-Source On-Resistance R DS(ON) 0.6 1.0 V = 1.8V, I = 100mA GS D 0.7 1.6 V = 1.5V, I = 50mA GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 500mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) 52 Input Capacitance C pF iss VDS = 16V, VGS = 0V, 4.8 Output Capacitance C pF oss f = 1.0MHz 3.1 Reverse Transfer Capacitance C pF rss 95 Gate Resistance R V = 0V, V = 0V g DS GS 0.7 Total Gate Charge Q nC g V = 4.5V, V = 10V, GS DS 0.09 Gate-Source Charge nC Qgs I = 250mA D Gate-Drain Charge 0.05 nC Q gd Turn-On Delay Time 3.7 ns t D(ON) V = 10V, V = 4.5V, DD GS Turn-On Rise Time 2.4 ns t R R = 47, R = 10, L G Turn-Off Delay Time 20.9 ns t D(OFF) I = 200mA D Turn-Off Fall Time 5.6 ns t F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN2450UFD January 2018 Diodes Incorporated www.diodes.com Document number: DS39898 Rev. 3 - 2