Green DMTH10H010SCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low Input Capacitance D BV R Package DSS DS(ON) T = +25C C High BV Rating for Power Application DSS 100V TO220AB 100A 9.5m V = 10V GS Low Input/Output Leakage Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Mechanical Data Case: TO220AB Applications Case Material: Molded Plastic, Green Molding Compound. UL Motor Control Flammability Classification Rating 94V-0 Backlighting Terminals: Matte Tin Finish Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Terminal Connections: See Diagram Below Weight: 1.85 grams (Approximate) TO220AB Top View Top View Bottom View Equivalent Circuit Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH10H010SCT TO220AB 50 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH10H010SCT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 100 C Continuous Drain Current I A D 80 T = +100C C Maximum Continuous Body Diode Forward Current 90 A T = +25C I C S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 400 A I DM 400 A Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I SM Avalanche Current, L = 0.3mH (Note 7) 33.7 A I AS 170 Avalanche Energy, L = 0.3mH (Note 7) E mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.5 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 60 C/W R JA Total Power Dissipation 187 W T = +25C P C D Thermal Resistance, Junction to Case R 0.8 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 7.4 9.5 m V = 10V, I = 13A DS(ON) GS D Diode Forward Voltage V 0.8 1.3 V V = 0V, I = 13A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 4468 iss V = 50V, V = 0V DS GS 746 Output Capacitance C pF oss f = 1MHz 31.6 Reverse Transfer Capacitance C rss Gate Resistance 0.9 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 56.4 Q g V = 50V, I = 13A, DD D Gate-Source Charge 15.4 nC Q gs V = 10V GS Gate-Drain Charge 14.0 Q gd 18.6 Turn-On Delay Time t D(ON) 22.5 Turn-On Rise Time t V = 50V, V = 10V, R DD GS ns 44.8 Turn-Off Delay Time t I = 13A, R = 6 D(OFF) D g 29.5 Turn-Off Fall Time t F 54.5 Reverse Recovery Time t ns RR I = 13A, di/dt = 100A/s F 106.4 Reverse Recovery Charge nC QRR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 July 2018 DMTH10H010SCT www.diodes.com Diodes Incorporated Document number: DS39681 Rev. 3 - 2