X4-Class V = 150V IXTP150N15X4 DSS TM Power MOSFET I = 150A IXTH150N15X4 D25 R 7.2m DS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-220 (IXTP) S G D S Symbol Test Conditions Maximum Ratings D (Tab) TO-247 V T = 25 C to 175 C 150 V DSS J (IXTH) V T = 25 C to 175 C, R = 1M 150 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G D D (Tab) I T = 25 C 150 A S D25 C I T = 25 C, Pulse Width Limited by T 260 A DM C JM G = Gate D = Drain I T = 25 C75A S = Source Tab = Drain A C E T = 25 C1J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 480 W D C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C International Standard Packages L Low R and Q T 1.6 mm (0.062in.) from Case for 10s 260 C DS(ON) G SOLD Avalanche Rated M Mounting Torque 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-220 3 g TO-247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 100 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 10 A DSS DS DSS GS PFC Circuits T = 150C 500 A J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 6.2 7.2 m DS(on) GS D D25 2019 IXYS CORPORATION, All Rights Reserved. DS100904B(11/19) IXTP150N15X4 IXTH150N15X4 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 70 120 S fs DS D R Gate Input Resistance 1.3 Gi C 5500 pF iss C V = 0V, V = 25V, f = 1MHz 900 pF oss GS DS C 4 pF rss Effective Output Capacitance C 660 pF o(er) Energy related V = 0V GS C 2100 pF V = 0.8 V o(tr) Time related DS DSS t 23 ns d(on) Resistive Switching Times t 5 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 2 (External) G t 6 ns f Q 105 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 28 nC gd R 0.31 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 150 A S GS I Repetitive, pulse Width Limited by T 600 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 100 ns rr I = 75A, -di/dt = 100A/ s F Q 350 nC RM V = 75V R I 7 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537