X-On Electronics has gained recognition as a prominent supplier of IXTP150N15X4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTP150N15X4 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTP150N15X4 IXYS

IXTP150N15X4 electronic component of IXYS
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Part No.IXTP150N15X4
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 150V/150A Ultra Junction X4-Class Power MOSFET, TO-220
Datasheet: IXTP150N15X4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.702 ea
Line Total: USD 9.7 
Availability - 375
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
375
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 9.702
3 : USD 7.714
7 : USD 7.294
50 : USD 7.182

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTP150N15X4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTP150N15X4 and other electronic components in the MOSFETs category and beyond.

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X4-Class V = 150V IXTP150N15X4 DSS TM Power MOSFET I = 150A IXTH150N15X4 D25 R 7.2m DS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-220 (IXTP) S G D S Symbol Test Conditions Maximum Ratings D (Tab) TO-247 V T = 25 C to 175 C 150 V DSS J (IXTH) V T = 25 C to 175 C, R = 1M 150 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G D D (Tab) I T = 25 C 150 A S D25 C I T = 25 C, Pulse Width Limited by T 260 A DM C JM G = Gate D = Drain I T = 25 C75A S = Source Tab = Drain A C E T = 25 C1J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 480 W D C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C International Standard Packages L Low R and Q T 1.6 mm (0.062in.) from Case for 10s 260 C DS(ON) G SOLD Avalanche Rated M Mounting Torque 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-220 3 g TO-247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 100 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 10 A DSS DS DSS GS PFC Circuits T = 150C 500 A J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 6.2 7.2 m DS(on) GS D D25 2019 IXYS CORPORATION, All Rights Reserved. DS100904B(11/19) IXTP150N15X4 IXTH150N15X4 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 70 120 S fs DS D R Gate Input Resistance 1.3 Gi C 5500 pF iss C V = 0V, V = 25V, f = 1MHz 900 pF oss GS DS C 4 pF rss Effective Output Capacitance C 660 pF o(er) Energy related V = 0V GS C 2100 pF V = 0.8 V o(tr) Time related DS DSS t 23 ns d(on) Resistive Switching Times t 5 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 2 (External) G t 6 ns f Q 105 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 28 nC gd R 0.31 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 150 A S GS I Repetitive, pulse Width Limited by T 600 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 100 ns rr I = 75A, -di/dt = 100A/ s F Q 350 nC RM V = 75V R I 7 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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