DMN2450UFB4-7R Diodes Incorporated

DMN2450UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 2 Footprint of just 0.6mm Thirteen Times Smaller than SOT23 I Max D BV R Max DSS DS(ON) 0.4mm Profile Ideal for Low Profile Applications TA = +25C Low Gate Threshold Voltage 0.4 V = 4.5V 1.0A GS Fast Switching Speed 20V 0.9A 0.5 V = 2.5V GS ESD Protected Gate 0.8A 0.7 V = 1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: X2-DFN1006-3 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) D X2-DFN1006-3 G S D G Gate Protection ESD Protected Gate S Diode Equivalent Circuit Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Tape Pitch (mm) Quantity per Reel DMN2450UFB4-7B 45 7 8 2 10,000 DMN2450UFB4-7R 45 7 8 4 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See 45 45 45 DMN2450UFB4 Marking Information 45 Top View Bar Denotes Gate and Source Side 45 = Part Marking Code DMN2450UFB4-7R 45 Top View 45 = Part Marking Code Bar Denotes Gate and Source Side DMN2450UFB4-7B 2 of 7 DMN2450UFB4 February 2018 Diodes Incorporated www.diodes.com Document number: DS40239 Rev. 2 - 2 45 45 45