STL42P4LLF6 Datasheet P-channel 40 V, 15.5 m typ., 42 A STripFET F6 DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features V R max. I P Order code DS DS(on) D TOT STL42P4LLF6 40 V 18 m 42 A 75 W Very low on-resistance Very low gate charge High avalanche ruggedness PowerFLAT 5x6 Low gate drive power loss D(5, 6, 7, 8) Applications Switching applications G(4) Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits S(1, 2, 3) very low R in all packages. DS(on) AM01475v4 Product status link STL42P4LLF6 Product summary Order code STL42P4LLF6 Marking 42P4LLF6 Package PowerFLAT 5x6 Packing Tape and reel DS10066 - Rev 3 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL42P4LLF6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 40 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 42 A C (1) I D Drain current (continuous) at T = 100 C 29 A C (1)(3) I Drain current (pulsed) 168 A DM Drain current (continuous) at T = 25 C 10 A pcb (2) I D Drain current (continuous) at T = 100 C 7.5 A pcb (2)(3) I Drain current (pulsed) 40 A DM (1) P Total power dissipation at T = 25 C 75 W TOT C (2) P Total power dissipation at T = 25 C pcb 4.8 W TOT T Storage temperature -55 to 175 C stg T Maximum junction temperature 175 C J 1. The value is limited by R . thj-case 2. The value is limited by R . thj-pcb 3. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.00 C/W thj-case (1) R Thermal resistance junction-pcb, single operation 31.3 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu, steady state. Note: For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. DS10066 - Rev 3 page 2/17