STP105N3LL STMicroelectronics

STP105N3LL N-channel 30 V, 2.7 m typ., 150 A, STripFET H6 Power MOSFET in a TO-220 package Datasheet production data Features Order code V R max. I DS DS(on) D TAB STP105N3LL 30 V 3.5 m 150 A Very low on-resistance Very low gate charge 3 2 1 High avalanche ruggedness TO-220 Low gate drive power loss Applications Switching applications Figure 1. Internal schematic diagram Description % 7 This device is an N-channel Power MOSFET developed using the STripFET H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. * 6 0 Y Table 1. Device summary Order code Marking Packages Packaging STP105N3LL P105N3LL TO-220 Tube July 2015 DocID023976 Rev 3 1/13 This is information on a product in full production. www.st.comContents STP105N3LL Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID023976 Rev 3