CPC3980 N-Channel Depletion-Mode INTEGRATED CIRCUITS DIVISION Vertical DMOS FET BV / R I (min) Package Description DSX DS(on) DSS BV (max) The CPC3980 is an 800V, N-channel, DGX 800V 45 100mA SOT-223 depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Divisions proprietary vertical DMOS process. Yielding a robust device with Features high input impedance, this process enables world class, high voltage MOSFET performance with an High Breakdown Voltage: 800V economical silicon gate architecture. Low On-Resistance: 45 max. at 25C Low V Voltage: -1.4 to -3.1V GS(off) As with all MOS devices, the FET structure prevents High Input Impedance thermal runaway and thermal-induced secondary Small Package Size: SOT-223 breakdown, which makes the CPC3980 ideal for use in high-power applications. Applications Normally-On Switches The CPC3980 is a highly reliable FET device that Solid State Relays has been used extensively in IXYS Integrated Circuits Converters Divisions Solid State Relays for industrial and Telecommunications telecommunications applications. Power Supply Current Regulators The CPC3980 is available in the SOT-223 package. Ordering Information Part Description CPC3980ZTR SOT-223: Tape and Reel (1000/Reel) Package Pinout Circuit Symbol D D 4 123 G G D S S DS-CPC3980-R02 1 www.ixysic.comINTEGRATED CIRCUITS DIVISION CPC3980 Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 800 V device. Functional operation of the device at conditions beyond Gate-to-Source Voltage 15 V those indicated in the operational sections of this data sheet is Pulsed Drain Current 150 mA 1 not implied. Total Package Dissipation 1.8 W Operational Temperature -55 to +125 C Junction Temperature, Maximum +125 C Storage Temperature -55 to +125 C 1 Mounted on 1 x1 2 oz. Copper FR4 board. Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV V = -5.5V, I =100A 800 - - V DSX GS D Gate-to-Source Off Voltage V V = 15V, I =1A -1.4 - -3.1 V GS(off) DS D Change in V with Temperature dV /dT V = 15V, I =1A - - 4.5 mV/C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS Drain-to-Source Leakage Current I V = -5.5V, V =800V - - 1 A D(off) GS DS Saturated Drain-to-Source Current I V = 0V, V =15V 100 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R -- 45 DS(on) V = 0V, I =100mA, V =10V GS D DS Change in R with Temperature dR /dT - - 2.5 %/C DS(on) DS(on) Forward Transconductance G I = 50mA, V = 10V 100 - - m fs D DS Input Capacitance C V = -3.5V 115 ISS GS Common Source Output Capacitance C 5 V = 25V - -pF OSS DS Reverse Transfer Capacitance C 3 f= 1MHz RSS Source-Drain Diode Voltage Drop V V = -5V, I =150mA - 0.72 1 V SD GS SD Thermal Resistance Junction to Ambient - - 55 - JA C/W Junction to Case - - 23 - JC 2 R02 www.ixysic.com