X-On Electronics has gained recognition as a prominent supplier of CPC3980ZTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPC3980ZTR MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPC3980ZTR IXYS

CPC3980ZTR electronic component of IXYS
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See Product Specifications
Part No.CPC3980ZTR
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET N-Ch Depletion Mode Vertical DMOS FET
Datasheet: CPC3980ZTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0879 ea
Line Total: USD 1.09 
Availability - 2862
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2862
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0879
10 : USD 0.7623
100 : USD 0.5522
500 : USD 0.4565
1000 : USD 0.4202
2000 : USD 0.4103
5000 : USD 0.3938

854
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.19
10 : USD 0.9646
27 : USD 0.6454
73 : USD 0.6104
1000 : USD 0.588

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the CPC3980ZTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPC3980ZTR and other electronic components in the MOSFETs category and beyond.

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CPC3980 N-Channel Depletion-Mode INTEGRATED CIRCUITS DIVISION Vertical DMOS FET BV / R I (min) Package Description DSX DS(on) DSS BV (max) The CPC3980 is an 800V, N-channel, DGX 800V 45 100mA SOT-223 depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Divisions proprietary vertical DMOS process. Yielding a robust device with Features high input impedance, this process enables world class, high voltage MOSFET performance with an High Breakdown Voltage: 800V economical silicon gate architecture. Low On-Resistance: 45 max. at 25C Low V Voltage: -1.4 to -3.1V GS(off) As with all MOS devices, the FET structure prevents High Input Impedance thermal runaway and thermal-induced secondary Small Package Size: SOT-223 breakdown, which makes the CPC3980 ideal for use in high-power applications. Applications Normally-On Switches The CPC3980 is a highly reliable FET device that Solid State Relays has been used extensively in IXYS Integrated Circuits Converters Divisions Solid State Relays for industrial and Telecommunications telecommunications applications. Power Supply Current Regulators The CPC3980 is available in the SOT-223 package. Ordering Information Part Description CPC3980ZTR SOT-223: Tape and Reel (1000/Reel) Package Pinout Circuit Symbol D D 4 123 G G D S S DS-CPC3980-R02 1 www.ixysic.comINTEGRATED CIRCUITS DIVISION CPC3980 Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 800 V device. Functional operation of the device at conditions beyond Gate-to-Source Voltage 15 V those indicated in the operational sections of this data sheet is Pulsed Drain Current 150 mA 1 not implied. Total Package Dissipation 1.8 W Operational Temperature -55 to +125 C Junction Temperature, Maximum +125 C Storage Temperature -55 to +125 C 1 Mounted on 1 x1 2 oz. Copper FR4 board. Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV V = -5.5V, I =100A 800 - - V DSX GS D Gate-to-Source Off Voltage V V = 15V, I =1A -1.4 - -3.1 V GS(off) DS D Change in V with Temperature dV /dT V = 15V, I =1A - - 4.5 mV/C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS Drain-to-Source Leakage Current I V = -5.5V, V =800V - - 1 A D(off) GS DS Saturated Drain-to-Source Current I V = 0V, V =15V 100 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R -- 45 DS(on) V = 0V, I =100mA, V =10V GS D DS Change in R with Temperature dR /dT - - 2.5 %/C DS(on) DS(on) Forward Transconductance G I = 50mA, V = 10V 100 - - m fs D DS Input Capacitance C V = -3.5V 115 ISS GS Common Source Output Capacitance C 5 V = 25V - -pF OSS DS Reverse Transfer Capacitance C 3 f= 1MHz RSS Source-Drain Diode Voltage Drop V V = -5V, I =150mA - 0.72 1 V SD GS SD Thermal Resistance Junction to Ambient - - 55 - JA C/W Junction to Case - - 23 - JC 2 R02 www.ixysic.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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