Preliminary Technical Information TM X-Class HiPerFET V = 1000V IXFT32N100XHV DSS Power MOSFET I = 32A IXFH32N100X D25 R 220m DS(on) IXFK32N100X TO-268HV N-Channel Enhancement Mode (IXFT..HV) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 V T = 25 C to 150 C 1000 V DSS J (IXFH) V T = 25 C to 150 C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS V Transient 40 V G GSM D S D (Tab) I T = 25 C32A D25 C I T = 25 C, Pulse Width Limited by T 64 A DM C JM TO-264 I T = 25 C16A (IXFK) A C E T = 25 C2J AS C dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J P T = 25 C 890 W D C G T -55 ... +150 C D J D (Tab) S T 150 C JM T -55 ... +150 C G = Gate D = Drain stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features M Mounting Torque (TO-247 & TO-264) 1.13 / 10 Nm/lb.in d Weight TO-268HV 4 g International Standard Packages TO-247 6 g Low R and Q DS(ON) G TO-264 10 g Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = 1mA 1000 V Easy to Mount DSS GS D Space Savings V V = V , I = 4mA 3.5 6.0 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 50 A DSS DS DSS GS Switch-Mode and Resonant-Mode T = 125C 3 mA J Power Supplies DC-DC Converters R V = 10V, I = 0.5 I , Note 1 220 m DS(on) GS D D25 PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved. DS100906B(10/18) IXFT32N100XHV IXFH32N100X IXFK32N100X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 16A, Note 1 14 23 S fs DS D R Gate Input Resistance 0.6 Gi C 4075 pF iss C V = 0V, V = 25V, f = 1MHz 520 pF oss GS DS C 10 pF rss Effective Output Capacitance C 140V = 0V pF Energy related o(er) GS V = 0.8 V C 585 pF DS DSS o(tr) Time related t 29 ns d(on) Resistive Switching Times t 12 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 80 ns d(off) R = 2 (External) G t 12 ns f Q 130 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 27 nC gs GS DS DSS D D25 Q 70 nC gd R 0.14 C/W thJC R TO-247 0.21 C/W thCS TO-264 0.15 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 32 A S GS I Repetitive, pulse Width Limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 200 ns rr I = 16A, -di/dt = 100A/ s F Q 1.5 C RM V = 100V R I 15 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537