NVHL025N65S3 MOSFET Power, N-Channel, Automotive SUPERFET III, Easy-drive 650 V, 75 A, 25 m www.onsemi.com Description BV R MAX I MAX DSS DS(on) D SuperFET III MOSFET is ON Semiconductors brandnew high voltage superjunction (SJ) MOSFET family that is utilizing charge 650 V 25 m V 75 A balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superior switching performance, and with D stand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easydrive series helps manage EMI issues and allows for easier design implementation. G Features AECQ101 Qualified S Max Junction Temperature 150C N-Channel MOSFET Typ. R (on) = 19.9 m DS Ultra Low Gate Charge (Typ. Q = 236 nC) G Low Effective Output Capacitance (Typ. C (eff.) = 2062 pF) OSS 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Typical Applications Automotive PHEVBEV DCDC Converter TO2473LD CASE 340CX Automotive Onboard Charger for PHEVBEV MARKING DIAGRAM Y&Z&3&K NVHL 025N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code NVHL025N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: July, 2019 Rev. 2 NVHL025N65S3/DNVHL025N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC Positive 30 V GSS AC Positive, (f > 1 Hz) 30 V AC Negative, (f > 1 Hz) 20 V I Drain Current Continuous (Tc = 25C) 75 A D Continuous (Tc = 100C) 65.8 A I Pulsed Drain Current Pulsed (Note 1) 187.5 A DM E Single Pulsed Avalanche Energy (Note 2) 2025 mJ AS E Repetitive Avalanche (Note 1) 5.95 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 V/ns P Power Dissipation (Tc = 25C) 595 W D Derate Above 25C 4.76 W/C T ,T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 15 A, R = 25 , starting T = 25C. AS G J 3. I < 75 A, di/dt 200 A/ms, VDD BVDSS, starting T = 25C. SD J 4. Essentially independent of operating temperature typical characteristics. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 0.21 C/W J C R Thermal Resistance, Junction to Ambient, Max 40 C/W J A PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Shipping (Qty / Packing) NVHL025N65S3 NVHL025N65S3 TO2473LD Tube 30 Units / Tube www.onsemi.com 2