X-On Electronics has gained recognition as a prominent supplier of NVHL160N120SC1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVHL160N120SC1 SiC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

NVHL160N120SC1 ON Semiconductor

NVHL160N120SC1 electronic component of ON Semiconductor
NVHL160N120SC1 ON Semiconductor
NVHL160N120SC1 SiC MOSFETs
NVHL160N120SC1 Semiconductors

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See Product Specifications
Part No. NVHL160N120SC1
Manufacturer: ON Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L
Datasheet: NVHL160N120SC1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.824 ea
Line Total: USD 7.82 
Availability - 2555
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ: 1  Multiples: 1
Pack Size: 1

 NVHL160N120SC1 More Buying Options & Price Grid(s)

Availability Price Quantity
2555
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 7.824
10 : USD 7.172
30 : USD 6.886
1020 : USD 6.721

Specifications

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVHL160N120SC1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVHL160N120SC1 and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The NVHL160N120SC1 is an N-channel, insulated-gate field-effect transistor (IGFET) with a metal-oxide semiconductor (MOS) structure. It is manufactured by ON Semiconductor and has a TO247-3L package with lead-free/halogen-free/antimony-free termination options. The device has a drain-source voltage rating of 1200 V, a maximum drain current of 10 A continuous at 25°C with exceptional avalanche threshold energy, a maximum pulsed drain current of 20 A, a maximum avalanche energy of around 270 mJ, an on-resistance of 160 mOhms, and a gate-source voltage range of from -20V to +20V. This device can be used for numerous applications requiring very fast switching, high avalanche capability, high blocking voltage capability and excellent temperature stability.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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