The NVHL160N120SC1 is an N-channel, insulated-gate field-effect transistor (IGFET) with a metal-oxide semiconductor (MOS) structure. It is manufactured by ON Semiconductor and has a TO247-3L package with lead-free/halogen-free/antimony-free termination options. The device has a drain-source voltage rating of 1200 V, a maximum drain current of 10 A continuous at 25°C with exceptional avalanche threshold energy, a maximum pulsed drain current of 20 A, a maximum avalanche energy of around 270 mJ, an on-resistance of 160 mOhms, and a gate-source voltage range of from -20V to +20V. This device can be used for numerous applications requiring very fast switching, high avalanche capability, high blocking voltage capability and excellent temperature stability.