DMG8N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low Input Capacitance D BV R Package DSS DS(ON) T = +25C C High BV Rating for Power Application DSS TO220AB 650V 8A 1.3 V = 10V Low Input/Output Leakage GS (Type TH) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET features low on-resistance and fast Mechanical Data switching, making it ideal for high-efficiency power management applications. Case: TO220AB (Type TH) Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0 Applications Terminals: Matte Tin Finish Annealed over Copper Leadframe. Motor Control Solderable per MIL-STD-202, Method 208 Backlighting Terminal Connections: See Diagram Below DC-DC Converters Weight: 1.85 grams (Approximate) Power Management Functions TO220AB (Type TH) Top View Bottom View Top View Equivalent Circuit Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMG8N65SCT TO220AB (Type TH) 50 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMG8N65SCT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 650 V DSS Gate-Source Voltage V 30 V GSS Steady T = +25C 8.0 C Continuous Drain Current V = 10V I A GS D State 3.8 T = +100C C Maximum Body Diode Forward Current (Note 5) 12 A I S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 12 A I DM Avalanche Current, L = 60mH (Note 7) 3.6 A I AS Avalanche Energy, L = 60mH (Note 7) 389 mJ E AS Peak Diode Recovery dv/dt dv/dt 5 V/ns Thermal Characteristics Characteristic Symbol Value Unit T = +25C 125 C Total Power Dissipation W P D 50 T = +100C C Thermal Resistance, Junction to Ambient (Note 6) 54 R JA C/W 1 Thermal Resistance, Junction to Case R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 650 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 650V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 2 3 4 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 0.9 1.3 V = 10V, I = 4A DS(ON) GS D Diode Forward Voltage V 0.87 1.5 V V = 0V, I = 8A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 1,217 iss V = 25V, f = 1.0MHz, DS 115 Output Capacitance C pF oss V = 0V GS 12 Reverse Transfer Capacitance C rss 1.24 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge 30 Q g V = 520V, I =8A, DD D Gate-Source Charge 4.8 nC Q gs V = 10V GS Gate-Drain Charge 13.3 Q gd Turn-On Delay Time 23 t D(ON) 46 Turn-On Rise Time t V = 450V, R = 25, I =8A, R DD G D ns 115 Turn-Off Delay Time t V = 10V D(OFF) GS 52 Turn-Off Fall Time t F 296 Body Diode Reverse Recovery Time t ns RR di/dt = 100A/s, V = 100V, DS 2.7 Body Diode Reverse Recovery Charge Q C I = 8A RR F Notes: 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 7 January 2017 DMG8N65SCT www.diodes.com Diodes Incorporated Document number: DS38402 Rev. 2 - 2