DMG1026UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Low On-Resistance
D
V R
(BR)DSS DS(ON)
T = +25C Low Input Capacitance
A
Fast Switching Speed
1.8 @ V = 10V 440mA
GS
60V
Low Input/Output Leakage
2.1 @ V = 4.5V 410mA
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET is designed to minimize the on-state
resistance (R ), and yet maintain superior switching
DS(ON) Mechanical Data
performance, making it ideal for high-efficiency power management
Case: SOT563
applications.
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Battery Operated Systems and Solid-State Relays
Solderable per MIL-STD-202, Method 208
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Terminal Connections: See Diagram Below
Memories, Transistors, etc.
Weight: 0.006 grams (Approximate)
DC-DC Converters
Power Management Functions
SOT563 D1
D2
S1 D1
1 6
G1 G2
5
G1 2 G2
D2 3 4 S2 Gate Protection Gate Protection
ESD PROTECTED TO 2kV
S1 S2
Diode Diode
Top View Bottom View Top View Q1 N-CHANNEL Q2 N-CHANNEL
Pin Definition
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMG1026UV-7 SOT563 3,000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMG1026UV
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 410
A
mA
Continuous Drain Current (Note 6) V = 10V I
GS D
State 300
T = +85C
A
T = +25C 440
A
Continuous Drain Current (Note 7) V = 10V t 10s I mA
GS D
320
T = +85C
A
Steady T = +25C 380
A
mA
Continuous Drain Current (Note 6) V = 4.5V I
GS D
State 270
T = +85C
A
T = +25C 410
A
Continuous Drain Current (Note 7) V = 4.5V t 10s I mA
GS D
295
T = +85C
A
Pulsed Drain Current (Note 8) 1.0 A
I
DM
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 6) 0.58 W
P
D
213 C/W
Thermal Resistance, Junction to Ambient @T = +25C (Note 6) R
A JA
Power Dissipation (Note 7) t 10s P 0.65 W
D
Thermal Resistance, Junction to Ambient @T = +25C (Note 7) t 10s R 192 C/W
A JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 250A
DSS GS D
1.0 A
Zero Gate Voltage Drain Current T = +25C I V = 50V, V = 0V
J DSS DS GS
50 nA V = 5V, V = 0V
GS DS
Gate-Source Leakage I
GSS
150 nA V = 10V, V = 0V
GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage V 0.5 1.8 V V = V , I = 250A
GS(th) DS GS D
1.2 1.8 V = 10V, I = 500mA
GS D
Static Drain-Source On-Resistance R
DS (ON)
1.4 2.1 V = 4.5V, I = 200mA
GS D
Forward Transfer Admittance 80 580 mS
|Y | V = 10V, I = 200mA
fs DS D
Continuous Source Current (Note 9) 200 mA -
I
S
Diode Forward Voltage 0.8 1.3 V
V V = 0V, I = 200mA
SD GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance 32
C
iss
V = 25V, V = 0V,
DS GS
Output Capacitance 4.4 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance C 2.9
rss
Gate Resistance R 126 V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge Q 0.45
g
V = 4.5V, V = 10V,
GS DS
Gate-Source Charge Q 0.08 pC
gs
I = 250mA
D
Gate-Drain Charge Q 0.08
gd
Turn-On Delay Time t 3.4 ns
D(on)
V = 10V, V = 30V,
GS DS
Turn-On Rise Time 3.4 ns
t
r
R = 150, R = 25,
L G
Turn-Off Delay Time 26.4 ns
t
D(off)
I = 200mA
D
Turn-Off Fall Time 16.3 ns
t
f
Notes: 6. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, measured in t 10s.
8. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
2 of 6
August 2016
DMG1026UV
www.diodes.com Diodes Incorporated
Document number: DS35068 Rev. 8 - 2