NVJS4151P MOSFET Power, Single P-Channel, Trench, SC-88 -20 V, -4.1 A Features NVJS4151P ELECTRICAL CHARACTERISTICS (T =25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 20 V (BR)DSS V = 0 V, I = 250 A GS D DraintoSource Breakdown Voltage V /T 12 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 16 V, GS V = 0 V DS T = 85C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 4.5 V 1.5 A GSS DS GS V = 0 V, V = 12 V 10 mA DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V 0.40 1.2 V GS(TH) V = V , I = 250 A GS DS D Negative Threshold Temperature V /T 4.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V, I = 2.9 A 55 67 DS(on) GS D m V = 2.5 V, I = 2.4 A 70 85 GS D V = 1.8 V, I = 1.0 A 180 205 GS D Forward Transconductance g V = 10 V, I = 3.3 A 12 S FS GS D CHARGES AND CAPACITANCES Input Capacitance C 850 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 160 OSS V = 10 V DS Reverse Transfer Capacitance C 110 RSS nC Total Gate Charge Q 10 G(TOT) V = 4.5 V, V = 10 V, GS DS GatetoSource Charge Q 1.5 GS I = 3.3 A D GatetoDrain Charge Q 2.8 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 0.85 s d(ON) Rise Time t 1.7 r V = 4.5 V, V = 10 V, GS DD I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 2.7 d(OFF) Fall Time t 4.2 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 1.3 A, 0.75 1.2 V SD GS S T = 25C J Reverse Recovery Time t 63 ns RR V = 0 V, dI /dt = 100 Charge Time T 9.0 GS S a A/ s, Discharge Time T 54 b I = 1.3 A S Reverse Recovery Charge Q 0.23 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.