MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPZ60R099P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket600V CoolMOS P6 Power Transistor IPZ60R099P6 PG-TO 247-4 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Features Increased MOSFET dv/dt ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Drain Pin 1 Very high commutation ruggedness Best in class RDS(on) /package Easy to use/drive due to driver source pin for better control of the gate Gate Pin 4 Pb-free plating, Halogen free mold compound Driver Qualified for industrial grade applications according to JEDEC (J-STD20 Source Power Pin 3 and JESD22) Source Pin 2 4-pin kelvin source concept Applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. Computing, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 99 m DS(on),max Qg.typ 70 nC I 109 A D,pulse E 400V 8.8 J oss Body diode di/dt 250 A/s Type / Ordering Code Package Marking Related Links IPZ60R099P6 PG-TO 247-4 6R099P6 see Appendix A Final Data Sheet 2 Rev. 2.0, 2015-07-13