NVMTS0D6N04CL MOSFET Power, Single N-Channel 40 V, 0.42 m , 554.5 A Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D Wettable Flank Plated for Enhanced Optical Inspection 0.42 m 10 V AEC101 Qualified and PPAP Capable 40 V 554.5 A 0.66 m 4.5 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (58) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V G (1) GS Continuous Drain Steady T = 25C I 554.5 A C D Current R (Note 2) State JC S (24) T = 100C 392.1 C NCHANNEL MOSFET Power Dissipation Steady T = 25C P 245.4 W D C R (Note 2) State JC T = 100C 122.7 C Continuous Drain Steady T = 25C I 78.9 A A D Current R State JA T = 100C 55.8 (Notes 1, 2) A Power Dissipation Steady T = 25C P 5.0 W A D R (Notes 1, 2) State JA T = 100C 2.5 A Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM POWER 88 Operating Junction and Storage Temperature T , T 55 to C J stg CASE 507AP Range +175 Source Current (Body Diode) I 204.5 A S MARKING DIAGRAM Single Pulse DraintoSource Avalanche E 2058 mJ AS Energy (I = 52.7 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) XXXXXXXX Stresses exceeding those listed in the Maximum Ratings table may damage the AWLYWW device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS XXX = Device Code Parameter Symbol Value Unit (8 AN characters max) JunctiontoCase Steady State (Note 2) R 0.61 C/W JC A = Assembly Location WL = 2digit Wafer Lot Code JunctiontoAmbient Steady State (Note 2) R 30.2 JA Y = Year Code 2 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz. Cu pad. WW = Work Week Code 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: July, 2019 Rev. 1 NVMTS0D6N04CL/DNVMTS0D6N04CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 12.6 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 6.0 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 50 A 0.35 0.42 DS(on) GS D m V = 4.5 V I = 50 A 0.52 0.66 GS D Forward Transconductance g V =5 V, I = 50 A 323 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 16013 ISS Output Capacitance C 6801 OSS V = 0 V, f = 1 MHz, V = 20 V pF GS DS Reverse Transfer Capacitance C 299 RSS Total Gate Charge Q 126 G(TOT) Threshold Gate Charge Q 22.5 G(TH) V = 4.5 V, V = 20 V I = 50 A nC GS DS D GatetoSource Charge Q 39.9 GS GatetoDrain Charge Q 38.4 GD Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 265 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4) GS TurnOn Delay Time t 89.4 d(ON) Rise Time t 111 r V = 4.5 V, V = 20 V, GS DS ns I = 50 A, R = 6 D G TurnOff Delay Time t 180 d(OFF) Fall Time t 84.7 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.75 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.6 J Reverse Recovery Time t 99.3 RR Charge Time t 62.4 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 36.9 b Reverse Recovery Charge Q 228 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2