DATA SHEET www.onsemi.com MOSFET Power, Single N-Channel V R MAX I MAX (BR)DSS DS(ON) D 40 V 0.48 m 10 V 533 A 40 V, 0.48 m , 533 A D (58) NVMTS0D6N04C Features Small Footprint (8x8 mm) for Compact Design G (1) Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G S (24) Wettable Flank Plated for Enhanced Optical Inspection NCHANNEL MOSFET AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 533 A TDFNW8 C D Current R (Note 2) State JC CASE 507AP T = 100C 377 C Power Dissipation Steady T = 25C P 245 W C D R (Note 2) State JC MARKING DIAGRAM T = 100C 122.7 C Continuous Drain Steady T = 25C I 76 A D A Current R State JA T = 100C 54 (Notes 1, 2) A 0D6N04C Power Dissipation Steady P W T = 25C 5.0 A D AWLYWW R (Notes 1, 2) State JA T = 100C 2.5 A Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM A = Assembly Location Operating Junction and Storage Temperature T , T 55 to C J stg +175 WL = 2digit Wafer Lot Code Y = Year Code Source Current (Body Diode) I 204.5 A S WW = Work Week Code Single Pulse DraintoSource Avalanche E 2035 mJ AS Energy (I = 53 A) L(pk) ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L See detailed ordering, marking and shipping information in the (1/8 from case for 10 s) package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Note 2) R 0.61 C/W JC JunctiontoAmbient Steady State (Note 2) R 30.2 JA 2 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: August, 2021 Rev. 3 NVMTS0D6N04C/DNVMTS0D6N04C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 13.19 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 DSS GS J V = 40 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 8.28 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 50 A 0.39 0.48 m DS(on) GS D Forward Transconductance g V =5 V, I = 50 A 233 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 11800 ISS Output Capacitance C 7030 V = 0 V, f = 1 MHz, V = 20 V pF OSS GS DS Reverse Transfer Capacitance C 199 RSS Total Gate Charge Q 187 G(TOT) Threshold Gate Charge Q 29.7 G(TH) V = 10 V, V = 20 V I = 50 A nC GS DS D GatetoSource Charge Q 46.6 GS GatetoDrain Charge Q 38.2 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 4) GS TurnOn Delay Time t 33.6 d(ON) Rise Time t 27.9 r V = 10 V, V = 20 V, GS DS ns I = 50 A, R = 2.5 D G TurnOff Delay Time t 86.0 d(OFF) Fall Time t 32.3 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.76 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.6 J Reverse Recovery Time t 105 RR Charge Time t 60 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 45 b Reverse Recovery Charge Q 274 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2