X-On Electronics has gained recognition as a prominent supplier of NVMTS0D7N06CTXG MOSFET across the USA, India, Europe, Australia, and various other global locations. NVMTS0D7N06CTXG MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NVMTS0D7N06CTXG ON Semiconductor

NVMTS0D7N06CTXG electronic component of ON Semiconductor
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See Product Specifications
Part No.NVMTS0D7N06CTXG
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET AFSM T6 60V SG NCH
Datasheet: NVMTS0D7N06CTXG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 7.264 ea
Line Total: USD 21792

Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Mon. 22 Jul to Wed. 24 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 6.417

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NVMTS0D7N06CTXG from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMTS0D7N06CTXG and other electronic components in the MOSFET category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, Single N-Channel 60 V, 0.72 m , 464 A NVMTS0D7N06C Features www.onsemi.com Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D AECQ101 Qualified and PPAP Capable 60 V 0.72 m 10 V 464 A Wettable Flank Plated for Enhanced Optical Inspection These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (58) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS G (1) GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 464 A C D S (24) Current R (Note 2) State JC T = 100C 328.1 C NCHANNEL MOSFET Power Dissipation Steady T = 25C P 294.6 W C D R (Note 2) State JC T = 100C 147.3 C Continuous Drain Steady T = 25C I 60.5 A A D State Current R JA T = 100C 42.7 (Notes 1, 2) A Power Dissipation Steady T = 25C P 5.0 W A D R (Notes 1, 2) State JA T = 100C 2.5 A Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM DFNW8 Operating Junction and Storage Temperature T , T 55 to C J stg CASE 507AP Range +175 Source Current (Body Diode) I 245.5 A S MARKING DIAGRAM Single Pulse DraintoSource Avalanche E 1754 mJ AS Energy (I = 40 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 0D7N06C AWLYWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A = Assembly Location THERMAL RESISTANCE MAXIMUM RATINGS WL = Wafer Lot Code Parameter Symbol Value Unit Y = Year Code WW = Work Week Code JunctiontoCase Steady State (Note 2) 0.5 C/W R JC JunctiontoAmbient Steady State (Note 2) R 30 JA 2 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz. Cu pad. ORDERING INFORMATION 2. The entire application environment impacts the thermal resistance values shown, See detailed ordering, marking and shipping information in the they are not constants and are only valid for the particular conditions noted. package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2020 Rev. 3 NVMTS0D7N06C/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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