V 1200 V
DS
I @ 25C 100 A
D
C3M0021120K
R 21 m
DS(on)
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Package
3rd generation SiC MOSFET technology
TAB
Drain
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q )
rr
Halogen free, RoHS compliant
Benefits
Drain
(Pin 1, TAB)
Reduce switching losses and minimize gate ringing
1 2 3 4
D S S G
Higher system efficiency
Reduce cooling requirements
Increase power density
Gate
Increase system switching frequency
(Pin 4)
Driver Power
Source Source
Applications
(Pin 3) (Pin 2)
Solar inverters
EV motor drive
High voltage DC/DC converters
Marking
Part Number Package
Switched mode power supplies
Load switch
C3M0021120K TO 247-4 C3M0021120K
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
Drain - Source Voltage 1200 V V = 0 V, I = 100 A
V GS D
DSmax
Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1
V
GSmax
Gate - Source Voltage (static) -4/+15 V Static Note 2
V
GSop
100 Fig. 19
V = 15 V, T = 25C
GS C
Continuous Drain Current A
I
D
74 V = 15 V, T = 100C
GS C
Pulsed Drain Current 200 A
I Pulse width t limited by T
D(pulse)
jmax
P
P Power Dissipation 469 W T =25C, T = 175 C Fig. 20
C J
D
-40 to
Operating Junction and Storage Temperature C
T , T
J stg
+175
Solder Temperature 260 C 1.6mm (0.063) from case for 10s
T
L
Note (1): When using MOSFET Body Diode V = -4V/+19V
GSmax
Note (2): MOSFET can also safely operate at 0/+15 V
1 C3M0021120K Rev. -, 07-2019Electrical Characteristics (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 1200 V V = 0 V, I = 100 A
(BR)DSS GS D
1.8 2.5 3.6 V V = V , I = 17.7 mA
DS GS D
VGS(th) Gate Threshold Voltage Fig. 11
2.0 V VDS = VGS, ID = 17.7 mA, TJ = 175C
I Zero Gate Voltage Drain Current 1 50 A V = 1200 V, V = 0 V
DSS DS GS
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
21 28.8 VGS = 15 V, ID = 50 A
Fig. 4,
R Drain-Source On-State Resistance m
DS(on)
5, 6
38 VGS = 15 V, ID = 50 A, TJ = 175C
35 VDS= 20 V, IDS= 50 A
g Transconductance S Fig. 7
fs
33 V = 20 V, I = 50 A, T = 175C
DS DS J
C Input Capacitance 4818
iss
V = 0 V, V = 1000 V
GS DS
Fig. 17,
C Output Capacitance 180 pF
oss
18
f = 1 MHz
C Reverse Transfer Capacitance 12
rss
VAC = 25 mV
E C Stored Energy 99 J Fig. 16
oss oss
E Turn-On Switching Energy (SiC Diode FWD) 0.69
ON
V = 800 V, V = -4 V/+15 V, I = 50 A,
DS GS Fig. 26,
D
mJ
29
R = 2.5, L= 157 H, T = 175C
J
G(ext)
E Turn Off Switching Energy (SiC Diode FWD) 0.42
OFF
EON Turn-On Switching Energy (Body Diode FWD) 1.58
V = 800 V, V = -4 V/+15 V, I = 50 A,
DS GS Fig. 26,
D
mJ
29
R = 2.5, L= 157 H, T = 175C
J
E Turn Off Switching Energy (Body Diode FWD) 0.34 G(ext)
OFF
t Turn-On Delay Time 29
d(on)
V = 800 V, V = -4 V/15 V
DD GS
t Rise Time 33
r
R = 2.5 ,
ns G(ext) Fig. 27
t Turn-Off Delay Time 57
d(off)
L= 157 H
t Fall Time 14
f
,
RG(int) Internal Gate Resistance 3.3 f = 1 MHz VAC = 25 mV
Qgs Gate to Source Charge 49
V = 800 V, V = -4 V/15 V
DS GS
Q Gate to Drain Charge 50 I = 50 A
gd nC D Fig. 12
Per IEC60747-8-4 pg 21
Q Total Gate Charge 162
g
(T = 25C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol Parameter Typ. Max. Unit Test Conditions Note
4.6 V V = -4 V, I = 25 A, T = 25 C
GS SD J
Fig. 8,
V Diode Forward Voltage
SD
9, 10
4.2 V V = -4 V, I = 25 A, T = 175 C
GS SD J
I Continuous Diode Forward Current 90 A V = -4 V, T = 25C Note 1
S C
GS
I Diode pulse Current 200 A Note 1
S, pulse V = -4 V, pulse width t limited by T
jmax
GS P
t Reverse Recover time 34 ns
rr
V = -4 V, I = 50 A, V = 800 V
GS SD R
Note 1
Q Reverse Recovery Charge 928 nC
rr
dif/dt = 2600 A/s, T = 175 C
J
I Peak Reverse Recovery Current 42 A
rrm
Thermal Characteristics
Typ. Test Conditions Note
Symbol Parameter Unit
R Thermal Resistance from Junction to Case 0.32
JC
C/W Fig. 21
RJA Thermal Resistance From Junction to Ambient 40
2 C3M0021120K Rev. -, 07-2019