X-On Electronics has gained recognition as a prominent supplier of IXFN52N100X Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. IXFN52N100X Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

IXFN52N100X IXYS

Name: IXFN52N100X
Brand: IXYS
SKU: IXFN52N100X_IXYS
Availability: OutOfStock
Rating: 5 (11 reviews)

IXFN52N100X electronic component of IXYS

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Part No.	IXFN52N100X
Manufacturer:	IXYS
Category:	Discrete Semiconductor Modules
Description:	Discrete Semiconductor Modules 1000V 44A SOT-227 Power MOSFET
Datasheet:	IXFN52N100X Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 53.9406 ea
Line Total: USD 53.94

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IXFN52N100X More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 18 Nov to Wed. 20 Nov MOQ : 1 Multiples : 1	1 : USD 54.1317 10 : USD 50.4966 30 : USD 48.384 100 : USD 43.848 500 : USD 41.3625 1000 : USD 39.9437

0 Ship by Mon. 18 Nov to Wed. 20 Nov MOQ : 1 Multiples : 1	1 : USD 53.9406

We are delighted to provide the IXFN52N100X from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFN52N100X and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

The IXFN52N100X is a Discrete Semiconductor Module manufactured by IXYS. It is a 1000V, 44A SOT-227 Power MOSFET. The module features a low RDS(on) at 25mO or less, which enables it to provide a power switch with low power dissipation and superior switching performance. The IXFN52N100X has a high dv/dt of 4V/ns or better, which allows it to handle high-speed switching applications. The module also has a low gate charge of 24nC or less, making it ideal for design with tight size/weight constraints. It is RoHS compliant and complies with both UL and TUV safety standards.

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

CLR may also be referenced as

IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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Manufacturer IXYS IXYS
Product Category Discrete Semiconductor Modules Discrete Semiconductor Modules
RoHS - XON Y Y
Vgs - Gate-Source Voltage 30 V 30 V
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 227 - 4 SOT - 227 - 4
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Series X - Class X - Class
Packaging Tube Tube
Technology Si Si
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Brand Ixys Ixys
Forward Transconductance - Min 23 S 23 S
Number Of Channels 1 Channel 1 Channel
Transistor Polarity N - Channel N - Channel
Channel Mode Enhancement Enhancement
Fall Time 9 ns 9 ns
Id - Continuous Drain Current 44 A 44 A
Pd - Power Dissipation 830 W 830 W
Product Type Mosfet Mosfet
Qg - Gate Charge 245 nC 245 nC
Rds On - Drain-Source Resistance 125 mOhms 125 mOhms
Rise Time 13 ns 13 ns
Factory Pack Quantity : 10 10
Subcategory Mosfets Mosfets
Tradename Hiperfet Hiperfet
Typical Turn-Off Delay Time 107 ns 107 ns
Typical Turn-On Delay Time 34 ns 34 ns
Vds - Drain-Source Breakdown Voltage 1000 V 1000 V
Vgs Th - Gate-Source Threshold Voltage 3.5 V 3.5 V