TM X-Class HiPerFET V = 1000V IXFT32N100XHV DSS Power MOSFET I = 32A IXFH32N100X D25 R 220m DS(on) IXFK32N100X TO-268HV N-Channel Enhancement Mode D (IXFT..HV) Avalanche Rated G G S S D (Tab) TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSS J V T = 25 C to 150 C, R = 1M 1000 V DGR J GS G V Continuous 30 V D GSS S D (Tab) V Transient 40 V GSM TO-264 I T = 25 C 32 A D25 C (IXFK) I T = 25 C, Pulse Width Limited by T 64 A DM C JM I T = 25 C 16 A A C E T = 25 C 2 J AS C dv/dt I I , V V , T 150C 50 V/ns G S DM DD DSS J D D (Tab) P T = 25 C 890 W D C S T -55 ... +150 C J G = Gate D = Drain T 150 C S = Source Tab = Drain JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-247 & TO-264) 1.13 / 10 Nm/lb.in d Low R and Q DS(ON) G Weight TO-268HV 4 g Avalanche Rated TO-247 6 g Low Package Inductance TO-264 10 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount Space Savings BV V = 0V, I = 1mA 1000 V DSS GS D V V = V , I = 4mA 3.5 6.0 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 50 A DSS DS DSS GS Power Supplies T = 125 C 3 mA J DC-DC Converters PFC Circuits R V = 10V, I = 0.5 I , Note 1 220 m DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2019 IXYS CORPORATION, All Rights Reserved. DS100906D(11/19) IXFT32N100XHV IXFH32N100X IXFK32N100X Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 16A, Note 1 14 23 S fs DS D R Gate Input Resistance 0.6 Gi C 4075 pF iss C V = 0V, V = 25V, f = 1MHz 520 pF oss GS DS C 10 pF rss Effective Output Capacitance C V = 0 V 140 pF Energy related o(er) GS V = 0.8 V C D S D S S 585 pF Time related o(tr) t 29 ns d(on) Resistive Switching Times t 12 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 80 ns d(off) R = 2 (External) G t 12 ns f Q 130 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 27 nC gs GS DS DSS D D25 Q 70 nC gd R 0.14 C/W thJC R TO-247 0.21 C/W thCS TO-264P 0.15 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 32 A S GS I Repetitive, pulse Width Limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 200 ns rr I = 16A, -di/dt = 100A/s F Q 1.5 C RM V = 100V R I 15 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537