Product Information

STL66N3LLH5

STL66N3LLH5 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 30V 0.0048 Ohm 21A STripFET V
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.9188 ea
Line Total: USD 2756.4

148410 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
148410 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

Stock Image

STL66N3LLH5
STMicroelectronics

3000 : USD 0.9188

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

STL66N3LLH5 Automotive-grade N-channel 30 V, 4.5 m typ., 80 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max. I DS DS(on) D STL66N3LLH5 30 V 5.8 m 80 A AEC-Q101 qualified Low on-resistance R DS(on) High avalanche ruggedness Low gate drive power loss Wettable flank package Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Table 1: Device summary Order code Marking Package Packing STL66N3LLH5 66N3LLH5 PowerFLAT 5x6 Tape and reel May 2017 DocID022356 Rev 4 1/16 www.st.com This is information on a product in full production. Contents STL66N3LLH5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 PowerFLAT 5x6 package information .......................................... 10 4.2 PowerFLAT 5X6 packing information .......................................... 13 5 Revision history ............................................................................ 15 2/16 DocID022356 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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