STL8P4LLF6 STMicroelectronics

STL8P4LLF6 P-channel 40 V, 0.0175 typ.,8 A, STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL8P4LLF6 40 V 0.0205 8 A 2.9 W 1 2 Very low on-resistance 3 4 Very low gate charge High avalanche ruggedness Low gate drive power loss PowerFLAT 3.3x3.3 Applications Switching applications Figure 1: Internal schematic diagram Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Table 1: Device summary Order code Marking Package Packaging STL8P4LLF6 8P4F6 PowerFLAT 3.3 x 3.3 Tape and reel March 2015 DocID025617 Rev 2 1/14 www.st.com This is information on a product in full production. Contents STL8P4LLF6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 3.3x3.3 package information .................................... 10 5 Revision history ............................................................................ 13 2/14 DocID025617 Rev 2