STL9N60M2 STMicroelectronics

STL9N60M2 N-channel 600 V, 0.76 typ., 4.8 A MDmesh II Plus low Q g Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V T R max I DS Jmax DS(on) D STL9N60M2 650 V 0.86 4.8 A Extremely low gate charge Lower R x area vs previous generation 1 DS(on) 2 3 Low gate input resistance 4 100% avalanche tested PowerFLAT 5x6 HV Zener-protected Applications Switching applications Figure 1. Internal schematic diagram Description D(5, 6, 7, 8) This device is an N-channel Power MOSFET 8 7 6 5 developed using a new generation of MDmesh technology: MDmesh II Plus low Q . This g revolutionary Power MOSFET associates a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and G(4) gate charge. It is therefore suitable for the most demanding high efficiency converters. 12 3 4 Top View S(1, 2, 3) AM15540v3 Table 1. Device summary Order code Marking Package Packaging STL9N60M2 9N60M2 PowerFLAT 5x6 HV Tape and reel March 2014 DocID025655 Rev 2 1/16 This is information on a product in full production. www.st.comContents STL9N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID025655 Rev 2