X-On Electronics has gained recognition as a prominent supplier of STL8DN6LF3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STL8DN6LF3 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STL8DN6LF3 STMicroelectronics

STL8DN6LF3 electronic component of STMicroelectronics
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Part No.STL8DN6LF3
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET Dual N-Ch 60V 7.8A 22.5mOhm STripFETIII
Datasheet: STL8DN6LF3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6086 ea
Line Total: USD 1.61 
Availability - 4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6086
10 : USD 1.5667
30 : USD 1.5382
100 : USD 1.5114

   
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Id - Continuous Drain Current
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Rds On - Drain-Source Resistance
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We are delighted to provide the STL8DN6LF3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STL8DN6LF3 and other electronic components in the MOSFETs category and beyond.

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STL8DN6LF3 Datasheet Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 double island package Features V R max. I Order code DS DS(on) D STL8DN6LF3 60 V 30 m 7.8 A AEC-Q101 qualified Logic level V GS(th) 175 C maximum junction temperature 100% avalanche rated Wettable flank package Applications Drain on rear side Switching applications 1 S2 8 D2 Description 2 G2 7 This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide 3 S1 6 superior switching performance. D1 5 4 G1 NG14G22D1D2RSS13S21 Product status link STL8DN6LF3 Product summary Order code STL8DN6LF3 Marking 8DN6LF3 PowerFLAT 5x6 Package double island Packing Tape and reel DS8667 - Rev 7 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL8DN6LF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 20 V GS V Drain-source voltage 60 V DS (1) I Drain current (continuous) at T = 25 C 20 A C D I Drain current (continuous) at T = 100 C 20 A D C Drain current (continuous) at T = 25 C 7.8 A pcb (2) I D Drain current (continuous) at T = 100 C 5.5 A pcb (2)(3) I Drain current (pulsed) 31.2 A DM P Total power dissipation at T = 25 C 65 W TOT C (2) P Total power dissipation at T = 25 C 4.3 W TOT pcb I Non-repetitive avalanche current 7.8 A AV (4) E Single pulse avalanche energy 190 mJ AS T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. Current is limited by bonding, with R = 2.3 C/W the chip is able to carry 30 A at 25 C. thJC 2. When mounted on an 1 inch 2 Oz. Cu board, t < 10 s. 3. Pulse width is limited by safe operating area. 4. Starting T = 25 C, I = I , V = 25 V. J D AS DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.3 thj-case C/W (1) R Thermal resistance junction-pcb 35 thj-pcb 1. When mounted on an 1 inch 2 Oz. Cu board, t < 10 s. DS8667 - Rev 7 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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