STL7N60M2 STMicroelectronics

10 11 STL7N60M2 N-channel 600 V, 0.92 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V Tjmax R max I DS DS(on) D STL7N60M2 650 V 1.05 5 A 6 7 5 Extremely low gate charge 4 Excellent output capacitance (C ) profile OSS 100% avalanche tested 12 1 Zener-protected PowerFLAT 5x5 Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET G S S S developed using MDmesh M2 technology. 10 9 8 7 D(5, 6,11, 12) Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, D 11 6 D G(10) rendering it suitable for the most demanding high efficiency converters. D 12 5 D 1 2 3 4 S(2, 3, 4, 7, 8, 9) NC S S S Pin 1 Top View identification GIPG260120150916ALS Table 1: Device summary Order code Marking Package Packaging STL7N60M2 7N60M2 PowerFLAT 5x5 Tape and reel January 2015 DocID027417 Rev 1 1/13 www.st.com This is information on a product in full production. Contents STL7N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 Package mechanical data ............................................................... 10 5 Revision history ............................................................................ 12 2/13 DocID027417 Rev 1