STL7N80K5 STMicroelectronics

STL7N80K5 N-channel 800 V, 0.95 typ., 3.6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V R max. I DS DS(on) D STL7N80K5 800 V 1.2 3.6 A 1 2 Industrys lowest R x area DS(on) 3 4 Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested PowerFLAT 5x6 VHV Zener-protected Applications Figure 1: Internal schematic diagram Switching applications D(5, 6, 7, 8) 8 7 6 5 Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic G(4) reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 1 2 3 4 Top View S(1, 2, 3) Table 1: Device summary Order code Marking Package Packing STL7N80K5 7N80K5 PowerFLAT 5x6 VHV Tape and reel July 2017 DocID025551 Rev 2 1/17 www.st.com This is information on a product in full production. Contents STL7N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 PowerFLAT 5x6 VHV package information ................................. 11 4.2 PowerFLAT 5x6 packing information ........................................... 14 5 Revision history ............................................................................ 16 2/17 DocID025551 Rev 2