STL8N65M5 STMicroelectronics

8 9 10 11 STL8N65M5 N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFET in PowerFLAT 5x5 Features V R DSS DS(on) Order code I D T max 7 Jmax 6 5 (1) STL8N65M5 710 V < 0.6 7 A 4 1. The value is rated according to R thj-case 3 12 2 13 Worldwide best R * area DS(on) 1 14 PowerFLAT 5x5 Higher V rating DSS High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Applications Figure 1. Internal schematic diagram D D D Switching applications 13 12 14 11 G Pin 1 Description (not connected) This device is an N-channel MDmesh V Power S 2 10 S MOSFET based on an innovative proprietary Drain vertical process technology, which is combined with STMicroelectronics well-known S 3 9 S PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- S 4 8 S 5 6 7 based Power MOSFETs, making it especially suitable for applications which require superior D D D power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STL8N65M5 8N65M5 PowerFLAT 5x5 Tape and reel August 2011 Doc ID 019013 Rev 3 1/13 www.st.com 13 Contents STL8N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 Doc ID 019013 Rev 3