X-On Electronics has gained recognition as a prominent supplier of STL90N10F7 MOSFET across the USA, India, Europe, Australia, and various other global locations. STL90N10F7 MOSFET are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

STL90N10F7 STMicroelectronics

STL90N10F7 electronic component of STMicroelectronics
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See Product Specifications
Part No.STL90N10F7
Manufacturer: STMicroelectronics
Category: MOSFET
Description: MOSFET N-CH 100V 0.009Ohm 16A STripFET VII
Datasheet: STL90N10F7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4014 ea
Line Total: USD 0.4

Availability - 3411
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17460
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 1.1539

2882
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 1.2658
10 : USD 1.2649
25 : USD 1.264
100 : USD 1.2631
250 : USD 1.262
500 : USD 1.2611
1000 : USD 1.2602

2810
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4014
10 : USD 0.334
30 : USD 0.3001
100 : USD 0.2664
500 : USD 0.2457
1000 : USD 0.2345

17460
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 1.1539

2851
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 33
Multiples : 1
33 : USD 1.2512

2882
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1000
Multiples : 1
1000 : USD 1.2602

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the STL90N10F7 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STL90N10F7 and other electronic components in the MOSFET category and beyond.

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STL90N10F7 Datasheet N-channel 100 V, 7 m typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I P Order code DS DS(on) D TOT STL90N10F7 100 V 8 m 70 A 100 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss PowerFLAT 5x6 High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced 1 2 3 4 trench gate structure that results in very low on-state resistance, while also reducing Top View S(1, 2, 3) internal capacitance and gate charge for faster and more efficient switching. AM15540v2 Product status link STL90N10F7 Product summary Order code STL90N10F7 Marking 90N10F7 Package PowerFLAT 5x6 Packing Tape and reel DS9621 - Rev 7 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL90N10F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 100 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 70 A C (1) I D Drain current (continuous) at T = 100 C 50 A C Drain current (continuous) at T = 25 C 16 A pcb (2) I D Drain current (continuous) at T = 100 C 11 A pcb (1)(3) I Drain current (pulsed) 280 A DM (2)(3) I Drain current (pulsed) 64 A DM (1) P Total power dissipation at T = 25 C 100 W TOT C (2) P Total power dissipation at T = 25 C pcb 5 W TOT (4) E Single pulse avalanche energy 300 mJ AS T Storage temperature range C stg - 55 to 175 T Operating junction temperature range C J 1. This value is rated according to R . thj-c 2. This value is rated according to R . thj-pcb 3. Pulse width is limited by safe operating area. 4. Starting T = 25 C, I = 10 A, V = 50 V. J D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.5 thj-case C/W (1) R Thermal resistance junction-pcb 31 thj-pcb 1. When mounted on 1 inch, 2 Oz. Cu FR-4 board. DS9621 - Rev 7 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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