STLD200N4F6AG STMicroelectronics

STLD200N4F6AG Automotive-grade N-channel 40 V, 1.27 m typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 DSC Datasheet - production data Features Order code V R max. I DS DS(on) D STLD200N4F6AG 40 V 1.50 m 120 A AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Wettable flank package Applications Figure 1: Internal schematic diagram Switching applications D(5, 6, 7, 8) Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) G(4) packages. S(1, 2, 3) Table 1: Device summary Order code Marking Package Packaging STLD200N4F6AG 200 PowerFLAT 5x6 dual side cooling Tape and reel July 2017 DocID028892 Rev 5 1/13 www.st.com This is information on a product in full production. Contents STLD200N4F6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 5x6 dual side cooling package information ................ 9 4.2 PowerFLAT 5x6 dual side cooling packing information ............... 11 5 Revision history ............................................................................ 12 2/13 DocID028892 Rev 5