X-On Electronics has gained recognition as a prominent supplier of DMN2022UNS-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2022UNS-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN2022UNS-7 Diodes Incorporated

DMN2022UNS-7 electronic component of Diodes Incorporated
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Part No.DMN2022UNS-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET Dual N-Ch Enh FET 20V 10Vgss 1.2W
Datasheet: DMN2022UNS-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.2267 ea
Line Total: USD 453.4 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.2267

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7965
10 : USD 0.702
100 : USD 0.4987
500 : USD 0.3938
1000 : USD 0.315
2000 : USD 0.2736
4000 : USD 0.27

   
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We are delighted to provide the DMN2022UNS-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2022UNS-7 and other electronic components in the MOSFETs category and beyond.

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DMN2022UNS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 10.8m V = 4.5V 10.7A GS Low Input/Output Leakage 20V 14.5m V = 2.5V 9.3A GS Complementary Pair MOSFET 17.0m V = 1.8V 8.6A GS ESD Protected Up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(ON) Mechanical Data performance, making it ideal for high efficiency power management applications. Case: POWERDI 3333-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Load Switch Weight: 0.0065 grams (Approximate) POWERDI 3333-8 D1 D2 Pin 1 S1 G1 S2 G2 G1 G2 Gate Protection Gate Protection ESD PROTECTED S2 S1 Diode Diode D1 D1 D2 D2 Internal Schematic Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN2022UNS-7 POWERDI 3333-8 2000/Tape & Reel DMN2022UNS-13 POWERDI 3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2022UNS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 20 V V DSS Gate-Source Voltage 10 V V GSS Steady T = +25C 10.7 A I A D State 8.6 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C A 13.9 t<10s A I D 11.1 T = +70C A Maximum Body Diode Forward Current (Note 6) 2 A I S 60 A Pulsed Drain Current (10s pulse, Duty cycle = 1%) I DM Avalanche Current (Note 7) L = 0.1mH I A AS Avalanche Energy (Note 7) L = 0.1mH E mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.2 W D Steady State 107 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 64 Total Power Dissipation (Note 6) P 1.9 W D Steady State 67 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 40 Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.4 1 V V = V , I = 250A GS(TH) DS GS D 9.0 10.8 VGS = 4.5V, ID = 4A 9.2 11.2 V = 4.0V, I = 4A GS D Static Drain-Source On-Resistance 9.8 13.0 m R V = 3.1V, I = 4A DS(ON) GS D 10.5 14.5 V = 2.5V, I = 4A GS D 13.9 17.0 V = 1.8V, I = 4A GS D Diode Forward Voltage V 0.7 1.1 V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 1870 Input Capacitance C pF iss V = 10V, V = 0V, DS GS 320 Output Capacitance C pF oss f = 1.0MHz 160 Reverse Transfer Capacitance C pF rss 96 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 20.3 Total Gate Charge nC Qg V = 4.5V, V = 10V, GS DS 2.8 Gate-Source Charge nC Q gs I = 6.5A D Gate-Drain Charge 3.6 nC Q gd Turn-On Delay Time 62 ns t D(ON) Turn-On Rise Time 101 ns t V = 4.5V, V = 10V, R GS DS Turn-Off Delay Time 596 ns t R = 6, R = 1.0 D(OFF) G L 224 Turn-Off Fall Time t ns F 150 Reverse Recovery Time t ns I = 4A, di/dt = 100A/s RR F Reverse Recovery Charge Q 135 nC I = 4A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 November 2015 DMN2022UNS Diodes Incorporated www.diodes.com Document number: DS38050 Rev. 2 - 2 NEW PRODUCT

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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