DMN2022UNS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 10.8m V = 4.5V 10.7A GS Low Input/Output Leakage 20V 14.5m V = 2.5V 9.3A GS Complementary Pair MOSFET 17.0m V = 1.8V 8.6A GS ESD Protected Up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(ON) Mechanical Data performance, making it ideal for high efficiency power management applications. Case: POWERDI 3333-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Load Switch Weight: 0.0065 grams (Approximate) POWERDI 3333-8 D1 D2 Pin 1 S1 G1 S2 G2 G1 G2 Gate Protection Gate Protection ESD PROTECTED S2 S1 Diode Diode D1 D1 D2 D2 Internal Schematic Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN2022UNS-7 POWERDI 3333-8 2000/Tape & Reel DMN2022UNS-13 POWERDI 3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2022UNS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 20 V V DSS Gate-Source Voltage 10 V V GSS Steady T = +25C 10.7 A I A D State 8.6 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C A 13.9 t<10s A I D 11.1 T = +70C A Maximum Body Diode Forward Current (Note 6) 2 A I S 60 A Pulsed Drain Current (10s pulse, Duty cycle = 1%) I DM Avalanche Current (Note 7) L = 0.1mH I A AS Avalanche Energy (Note 7) L = 0.1mH E mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.2 W D Steady State 107 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 64 Total Power Dissipation (Note 6) P 1.9 W D Steady State 67 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 40 Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.4 1 V V = V , I = 250A GS(TH) DS GS D 9.0 10.8 VGS = 4.5V, ID = 4A 9.2 11.2 V = 4.0V, I = 4A GS D Static Drain-Source On-Resistance 9.8 13.0 m R V = 3.1V, I = 4A DS(ON) GS D 10.5 14.5 V = 2.5V, I = 4A GS D 13.9 17.0 V = 1.8V, I = 4A GS D Diode Forward Voltage V 0.7 1.1 V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 1870 Input Capacitance C pF iss V = 10V, V = 0V, DS GS 320 Output Capacitance C pF oss f = 1.0MHz 160 Reverse Transfer Capacitance C pF rss 96 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 20.3 Total Gate Charge nC Qg V = 4.5V, V = 10V, GS DS 2.8 Gate-Source Charge nC Q gs I = 6.5A D Gate-Drain Charge 3.6 nC Q gd Turn-On Delay Time 62 ns t D(ON) Turn-On Rise Time 101 ns t V = 4.5V, V = 10V, R GS DS Turn-Off Delay Time 596 ns t R = 6, R = 1.0 D(OFF) G L 224 Turn-Off Fall Time t ns F 150 Reverse Recovery Time t ns I = 4A, di/dt = 100A/s RR F Reverse Recovery Charge Q 135 nC I = 4A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 November 2015 DMN2022UNS Diodes Incorporated www.diodes.com Document number: DS38050 Rev. 2 - 2 NEW PRODUCT