DMN10H700S 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I D Low Input Capacitance BV R DSS DS(ON) T = +25C A Fast Switching Speed 700m V = 10V 0.70A GS Small Surface Mount Package 100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.62A 900m V = 6.0V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching DS(ON) Case: SOT23 performance, making it ideal for high efficiency power management Case Material: Molded Plastic. UL Flammability Classification applications. Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 DC-DC Converters Leadframe). Power Management Functions Terminal Connections: See Diagram Battery Operated Systems and Solid-State Relays Weight: 0.006 grams (Approximate) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D D G G S S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN10H700S-7 SOT23 3,000/Tape & Reel DMN10H700S-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H700S Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 0.70 A Continuous Drain Current (Note 6) V = 10V I A GS D State 0.56 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle 1%) 2.5 A IDM Maximum Body Diode Continuous Current (Note 6) I 0.6 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 0.4 Total Power Dissipation P W D (Note 6) 0.5 Thermal Resistance, Junction to Ambient (Note 5) R 303 JA Steady state Thermal Resistance, Junction to Ambient (Note 6) 239 C/W R JA (Note 6) Thermal Resistance, Junction to Case 88 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 100V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 2.0 2.7 4.0 V V V = V , I = 250A GS(TH) DS GS D 540 700 V = 10V, I = 1.5A GS D Static Drain-Source On-Resistance m R DS(ON) 550 900 V = 6.0V, I = 1.0A GS D Diode Forward Voltage V 0.9 1.1 V V = 0V, I = 1.5A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 235 Input Capacitance C iss V = 50V, V = 0V, DS GS 7 Output Capacitance C pF oss f = 1.0MHz 5 Reverse Transfer Capacitance C rss Gate Resistance R 1.9 V = 0V, V = 0V, f = 1.0MHz G DS GS 4.6 Total Gate Charge Q g V = 50V, V = 10V, DS GS Gate-Source Charge 1.1 nC Q gs I = 1.0A D Gate-Drain Charge 1.6 Q gd Turn-On Delay Time 2.5 t D(ON) 1.1 Turn-On Rise Time t V = 50V, I = 1.0A, R DS D ns 5.4 Turn-Off Delay Time t V = 10V, R = 6.0 D(OFF) GS G 1.0 Turn-Off Fall Time t F 22 Reverse Recovery Time t ns RR V = 100V, I =1.8A, di/dt=100A/s R F 15 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMN10H700S October 2017 Diodes Incorporated www.diodes.com Document number: DS38103 Rev. 3 - 2 NEW PRODUCT ADVANCED INFORMATION