DMT6005LPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I D 100% Unclamped Inductive Switching ensures more reliable and BV R Max DSS DS(ON) T = +25C C robust end application (Note 9) Low R Minimizes Power Losses DS(ON) 100A 4.5m V = 10V GS 60V Low Q Minimizes Switching Losses G 6.5m V = 4.5V 100A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data Case: PowerDI 5060-8 This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 High Frequency Switching Terminal Finish Matte Tin Annealed over Copper Leadframe. Sync. Rectification Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.097 grams (Approximate) PowerDI5060-8 S D Pin1 S D S D D G Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT6005LPS-13 PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT6005LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V VDSS Gate-Source Voltage 20 V V GSS T = +25C 17.9 A Continuous Drain Current (Note 5) A I D 14.3 T = +70C A T = +25C C 100 (Note 9) Continuous Drain Current (Note 6) I A D T = +100C 90 C Maximum Continuous Body Diode Forward Current (Note 6) 100 A IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 160 A I DM Avalanche Current, L=1mH 14.8 A I AS Avalanche Energy, L=1mH 98 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) T = +25C P 2.6 W A D Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W JA Total Power Dissipation (Note 6) 125 W TC = +25C PD Thermal Resistance, Junction to Case (Note 6) 1 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 3.5 4.5 V = 10V, I = 50A GS D Static Drain-Source On-Resistance R m DS(ON) 5 6.5 V = 4.5V, I = 12.5A GS D Diode Forward Voltage 0.9 V V V = 0V, I = 50A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2,962 C ISS V = 30V, V = 0V, DS GS Output Capacitance 965.2 pF C OSS f = 1MHz Reverse Transfer Capacitance C 59.8 RSS 0.66 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge (V = 10V) Q 47.1 GS G Total Gate Charge (V = 4.5V) Q 23.1 GS G nC V = 30V, I = 50A DD D 10.2 Gate-Source Charge Q GS Gate-Drain Charge Q 12.5 GD Turn-On Delay Time 8.3 t D(ON) Turn-On Rise Time 9.4 t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time 22 I = 30A, R = 3.3 t D G D(OFF) Turn-Off Fall Time 8.9 t F Body Diode Reverse Recovery Time ns t 40.4 RR I = 30A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 49.7 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. 2 of 7 DMT6005LPS May 2017 Diodes Incorporated www.diodes.com Document number: DS38867 Rev. 3 - 2