X-On Electronics has gained recognition as a prominent supplier of R6035KNZ1C9 MOSFETs across the USA, India, Europe, Australia, and various other global locations. R6035KNZ1C9 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R6035KNZ1C9 ROHM

R6035KNZ1C9 electronic component of ROHM
R6035KNZ1C9 ROHM
R6035KNZ1C9 MOSFETs
R6035KNZ1C9  Semiconductors

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See Product Specifications
Part No. R6035KNZ1C9
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 600V 35A Si MOSFET
Datasheet: R6035KNZ1C9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 5.681
10 : USD 3.5497
100 : USD 2.8126
450 : USD 2.6671
900 : USD 2.3858
2700 : USD 2.3762
5400 : USD 2.3762
10350 : USD 2.3471
25200 : USD 2.2792
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the R6035KNZ1C9 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R6035KNZ1C9 and other electronic components in the MOSFETs category and beyond.

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R6035KNZ1 Datasheet Nch 600V 35A Power MOSFET llOutline V 600V DSS R (Max.) 0.102 DS(on) TO-247 I 35A D P 379W D llInner circuit llFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating RoHS compliant llPackaging specifications Packing Tube Reel size (mm) - llApplication Tape width (mm) - Type Switching Basic ordering unit (pcs) 450 Taping code C9 Marking R6035KNZ1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 600 V DSS *1 Continuous drain current (T = 25C) I 35 A c D *2 I Pulsed drain current 105 A DP static 20 V V Gate - Source voltage GSS AC(f 1Hz) 30 V I Avalanche current, single pulse 6.6 A AS *3 E Avalanche energy, single pulse 796 mJ AS Power dissipation (T = 25C) P 379 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2015 ROHM Co., Ltd. All rights reserved. 20150914 - Rev.001 Obsolete R6035KNZ1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 0.33 /W thJC R Thermal resistance, junction - ambient - - 30 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 600 - - V (BR)DSS GS D voltage V = 600V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3 - 5 V GS(th) DS D V = 10V, I = 18.1A GS D Static drain - source *5 R T = 25C - 0.092 0.102 DS(on) j on - state resistance T = 125C - 0.200 - j Gate resistance R f = 1MHz, open drain - 1.0 - G www.rohm.com 2/12 20150914 - Rev.001 2015 ROHM Co., Ltd. All rights reserved. Obsolete

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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