SI2306 Features High Dense Cell Design for Extremely Low R DS(ON) Rugged and Reliable Surface Mount Package Epoxy Meets UL 94 V-0 Flammability Rating N-Channel MOSFET Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-23 Thermal Resistance: 100C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain -source Voltage 30 V DS 3 Gate -Source Voltage V 20 V GS B C (Note 2,3) I 3.16 A Drain Current-Continuous D 1 2 F E Drain Current-Pulse I 20 A DM (Note 2,3) Source Current-Continuoud I 0.62 W S G H J Power Dissipation P 0.75 W D L K Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 Internal Structure B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 1. * 7 E F 0.018 0.024 0.45 0.60 2. G 0.01 0.15 0.0004 0.006 3. G H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 Marking:S6 S K 0.012 0.020 0.30 0.51 L 0.00 7 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COM 5 ,1 6285&(SI2306 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 30 V (BR)DSS GS D Gate-Threshold Voltage V V =V , I =250A V 1.0 3.0 GS(th) DS GS D I V = 20V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS Zero Gate Voltage Drain Current I V =30V, V =0V 0.5 A DSS DS GS V =10V, I =3.5A 38 47 GS D m (Note 4) Drain-Source On-Resistance R DS(on) V =4.5V, I =2.8A 52 65 GS D (Note 4) 7.0 g V =4.5V, I =2.5A Forward Transconductance S FS DS D Diode Forward Voltage V V =0V, I =1.25A 0.8 1.2 V SD GS S Dynamic Characteristics C Input Capacitance iss 305 C V =15V,V =0V, f=1MHz pF 65 Output Capacitance oss DS GS Reverse Transfer Capacitance C 29 rss f=1MHz Gate Resistance R 2.5 5 7.5 g V =15V,V =5V,I =2.5A Gate Charge Q D S GS D 3.0 4.5 g Q Total Gate Charge 6 9 gt nC V =15V,V =10V,I =2.5A D S GS D Q Gate-Source Charge 1.6 gs Q Gate-Drain Charge 0.6 gd Switching Characteristics t d(on) 7 11 Turn-On Delay Time V =15V,R =15,V =10V, t D D L G EN 18 r 12 Turn-On Rise Time I =1A,R =6 D G ns t 2 5 d(off) 14 Turn-Off Delay Time t 6 1 0 f Turn-Off Fall Time Note 2. Surface Mounted on 1 x1 FR4 Board, t<5s. 3. Pulse Width Limited by Maximum Junction Temperature. 4. Pulse Test: Pulse Width300s, Duty Cycle 2%. Rev.3-3-12012020 2/4 MCCSEMI.COM