SI2318A Features Trench Power LV MOSFET Technology High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel MOSFET Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C SOT-23 (Note 1) Thermal Resistance: 104C/W Junction to Ambient A Parameter Symbol Rating Unit D V Drain-Source Voltage 40 V DS 3 Gate-Source Voltage V 20 V GS B C Drain Current-Continuous 1 2 I D 5.0 T =25C Steady State A F E A T =70C Steady State 4.0 A (Note 2) Drain Current-Pulsed I 20 A DM G H J Power Dissipation P 1.2 W D L K DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 1. * 7 E C 0.047 0.055 1.20 1.40 2. D 0.034 0.041 0.85 1.05 3. G E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 Marking Code: 4005. G 0.01 0.15 0.0004 0.006 S H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-1-01012019 1/4 MCCSEMI.COM 5 ,1 6285&(SI2318A ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V V =0V, I =250A 40 V (BR)DSS GS D (Note 3) V V =V , I =250A 0.8 1.3 1.8 V Gate-Threshold Voltage GS(th) DS GS D V = 20V, V =0V 100 GS DS I Gate-Body Leakage Current nA GSS V = 10V, V =0V 50 GS DS Zero Gate Voltage Drain Current I V =40V, V =0VT =25C 1 A DSS DS GS C V =10V, I =5A 30 45 GS D Drain-Source On-Resistance R m DS(on) V =4.5V, I =3A 40 60 GS D V V =0V, I =10A 1.2 Diode Forward Voltage V SD GS S Maximum Body-Diode Continuous Is 5 A Current Dynamic Characteristics C Input Capacitance 330 iss V =20V,V =0V, f=1MHz Output Capacitance C 93 pF DS GS oss C Reverse Transfer Capacitance 20 rss Switching Characteristics Turn-On Delay Time t 13 d(on) t 52 Turn-On Rise Time r V =20V,V =10V,R =2, DD GS L ns R =3 GEN Turn-Off Delay Time t 17 d(off) t 10 Turn-Off Fall Time f Total Gate Charge Qg 5.4 V =10V,Vgs=20V,I =3.5A Gate-Source Chage Qgs 1.5 Nc DS D 1.9 Gage-Drain Charge Qgd Note: 1. Device Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. 2. Pulse Test: Pulse Width300s,Duty Cycle2%. Rev.3-1-01012019 2/4 MCCSEMI.COM