Features Operated at Low Logic Level Gate Drive P-Channel Switch with Low R DS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 &KDQQHO 026)(73 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C SOT-723 Storage Temperature Range: -55C to +150C Maximum Thermal Resistance: 833C/W Junction to Ambient E Parameter Symbol Rating Unit 3 Drain-Source Voltage V -20 V DS B C V Gate-Source Voltage 12 V GS 1 2 F D I -0.66 A Drain Current-Continuous D A I -1.2 A Pulsed Drain Current DM - * + Power Dissipation P 0.15 W D Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, DIMENSIONS <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. INCHES MM DIM NOTE MIN MAX MIN MAX A 0.043 0.051 1.10 1.30 B 0.043 0.051 1.10 1.30 C 0.028 0.035 0.70 0.90 0.031 D 0.80 TYP. E 0.009 0.017 0.22 0.42 F 0.005 0.013 0.12 0.32 G 0.000 0.002 0.00 0.05 H0.017 0.021 0.43 0.54 J 0.003 0.006 0.08 0.15 ,QWHUQDO 6WUXFWXUH 4VHHFTUFE 4PMEFS 1BE -BZPVU D 1. GATE 0.42 mm 2. SOURCE 3. DRAIN G 0.30 Marking:KD S 1.00 0.30 0.32 0.80 Rev.3-5-12012020 1/4 MCCSEMI.COM 6, .ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -20 V (BR)DSS GS D Gate-Threshold Voltage V V =V , I =-250A V -0.35 -0.8 GS(th) DS GS D -1.0 V =-20V, V =0V,T =25 a DS GS I Zero Gate Voltage Drain Current DSS A V =-20V, V =0V,T =125 -2.0 DS GS a 10 V =10V, V =0V A Gate-body Leakage Current I GS DS GSS V =-4.5V, I =-1000mA GS D 0.52 Drain-Source On-Resistance R DS(on) V =-2.5V, I =-800mA 0.70 GS D V =-1.8V, I =-500mA 0.95 GS D g 1.2 S Forward transconductance V =-10V, I =-540mA FS DS D V V =0V, I =-500mA Diode Forward Voltage -1.2 V SD GS S Dynami F Characteristics C 113 170 iss Input Capacitance V =-16V,V =0V, f=1MHz C pF DS GS 15 25 oss Output Capacitance C rss 9 15 Reverse Transfer Capacitance Switching Characteristics t 9.0 d(on) Turn-on Delay Time V =-10V,V =-4.5V,I =-200mA, 32.7 t DS GS D d(off) Turn-off Delay Time ns R =10 GEN t 5.8 Rise Time r Fall Time t 20.3 f Rev.3-5-12012020 2/4 MCCSEMI.COM 6, .