Preliminary Technical Information TM V = 40V TrenchT4 IXTA270N04T4 DSS I = 270A Power MOSFET IXTA270N04T4-7 D25 R 2.2m DS(on) N-Channel Enhancement Mode TO-263 AA Avalanche Rated G S D (Tab) G = Gate D = Drain Symbol Test Conditions Maximum Ratings S = Source Tab = Drain V T = 25 C to 175 C40 V DSS J V T = 25 C to 175 C, R = 1M 40 V DGR J GS TO-263 (7-Leads) V Transient 15 V GSM I T = 25 C 270 A D25 C 1 I Lead Current Limit, RMS 160 A LRMS I T = 25 C, Pulse Width Limited by T 800 A 7 DM C JM I T = 25 C 135 A (Tab) A C E T = 25 C 750 mJ Pins: 1 - Gate AS C 2, 3, 5 , 6 , 7 - Source I T = 25 C 270 A A C 4 (Tab) - Drain E T = 25 C 350 mJ AS C P T = 25 C 375 W D C Features T -55 ... +175 C J International Standard Packages T 175 C JM 175C Operating Temperature T -55 ... +175 C stg High Current Handling Capability T Maximum Lead Temperature for Soldering 300 C Avalanche Rated L T 1.6 mm (0.062in.) from Case for 10s 260 C Low R SOLD DS(on) F Mounting Force (TO-263) 10.65 / 2.2..14.6 N/lb C Weight TO-263 2.5 g Advantages TO-263 (7Leads) 3.0 g Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Applications J BV V = 0V, I = 250 A 40 V DSS GS D Synchronous Buck Converters V V = V , I = 250 A 2.0 4.0 V High Current Switching Power GS(th) DS GS D Supplies I V = 15V, V = 0V 200 nA GSS GS DS Battery Powered Electric Motors I V = V , V = 0V 5 A DSS DS DSS GS Resonant-Mode Power Supplies T = 150C 750A Electronics Ballast Application J Class D Audio Amplifiers R V = 10V, I = 50A, Note 1 2.2 m DS(on) GS D 2016 IXYS CORPORATION, All Rights Reserved DS100705A(03/16) IXTA270N04T4 IXTA270N04T4-7 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D R Gate Input Resistance 1.4 Gi C 9140 pF iss C V = 0V, V = 25V, f = 1MHz 1450 pF GS DS oss C 980 pF rss t 18 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 135A GS DS DSS D t 72 ns d(off) R = 2 (External) G t 23 ns f Q 182 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 45 nC gs GS DS DSS D D25 Q 67 nC gd R 0.40C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 270 A S GS I Repetitive, Pulse width limited by T 1080 A JM SM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 48 ns I = 150A, V = 0V rr F GS I -di/dt = 100A/ s 1.8 A RM V = 30V R Q 43 nC RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact location must be 5mm DS(on) or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537