X-On Electronics has gained recognition as a prominent supplier of DMP21D6UFD-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP21D6UFD-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP21D6UFD-7 Diodes Incorporated

Name: DMP21D6UFD-7
Brand: Diodes Incorporated
SKU: DMP21D6UFD7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMP21D6UFD-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMP21D6UFD-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET MOSFET BVDSS: 8V-24V
Datasheet:	DMP21D6UFD-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1022 ea
Line Total: USD 0.51

Availability - 1901
Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ: 5 Multiples: 5
Pack Size: 5

DMP21D6UFD-7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1901

Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ : 5
Multiples : 5

5 : USD 0.1022
50 : USD 0.0819
150 : USD 0.0716
500 : USD 0.0549
3000 : USD 0.0445
6000 : USD 0.0423

5598

Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ : 1
Multiples : 1

1 : USD 0.3175
10 : USD 0.1937
100 : USD 0.1164
500 : USD 0.0803
1000 : USD 0.0682
3000 : USD 0.0484
6000 : USD 0.0462
9000 : USD 0.0451

2774

Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ : 1
Multiples : 1

1 : USD 0.294
10 : USD 0.2142
25 : USD 0.1652
100 : USD 0.1036
269 : USD 0.0658

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

Id - Continuous Drain Current

600 mA 600 mA

Vds - Drain-Source Breakdown Voltage

20 V 20 V

Rds On - Drain-Source Resistance

700 mOhms 700 mOhms

Transistor Polarity

P - Channel P - Channel

Vgs th - Gate-Source Threshold Voltage

500 mV 500 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

800 mW 800 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

X1 - DFN1212 - 3 X1 - DFN1212 - 3

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

4.5 V 4.5 V

Qg - Gate Charge

500 pC 500 pC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Brand

Diodes Incorporated Diodes Incorporated

Cnhts

8541290000 8541290000

Fall Time

19.2 ns 19.2 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

4.3 ns 4.3 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

20.2 ns 20.2 ns

Typical Turn-On Delay Time

8.5 ns 8.5 ns

Notes:- Show Stocked Products With Similar Attributes.

DMP21D6UFD-7 Alternative Parts

We are delighted to provide the DMP21D6UFD-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP21D6UFD-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

DMP21D6UFD-7 is a MOSFET manufactured by Diodes Incorporated. It is designed for low to high side switching and is capable of handling drain-source voltages of up to 24V. Its avalanche energy rating is as high as 8V and its package size is a small, low-profile DFN-6 with standard lead spacing. It can be easily mounted on any board and its on-resistance is equivalent to P-Channel and N-Channel MOSFETs. Its is optimized for low gate charge, making it suitable for power-switching applications. It also has integrated body diodes which increases the device's flexibility by allowing parallel connection and supporting dual synchronous rectification. It is also protected against Electrostatic Discharge (ESD) and is compliant with U-MOS ? standards. Finally, it is also RoHS compliant, making it environmentally friendly.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1901 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 5 Multiples : 5	5 : USD 0.1022 50 : USD 0.0819 150 : USD 0.0716 500 : USD 0.0549 3000 : USD 0.0445 6000 : USD 0.0423

5598 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 0.3175 10 : USD 0.1937 100 : USD 0.1164 500 : USD 0.0803 1000 : USD 0.0682 3000 : USD 0.0484 6000 : USD 0.0462 9000 : USD 0.0451

2774 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 0.294 10 : USD 0.2142 25 : USD 0.1652 100 : USD 0.1036 269 : USD 0.0658

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