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FDMS86183 N-Channel Shielded Gate PowerTrench MOSFET www.onsemi.com FDMS86183 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 51 A, 12.8 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max r = 12.8 m at V = 10 V, I = 16 A DS(on) GS D incorporates Shielded Gate technology. This process has been Max r = 34.6 m at V = 6 V, I = 8 A optimized to minimize on-state resistance and yet maintain DS(on) GS D superior switching performance with best in class soft body 50% Lower Qrr than Other MOSFET Suppliers diode. Lowers Switching Noise/EMI Applications MSL1 Robust Package Design Primary DC-DC MOSFET 100% UIL Tested Synchronous Rectifier in DC-DC and AC-DC RoHS Compliant Motor Drive Solar Bottom Top S D D D D D D S D S G S S D G S Pin 1 Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 51 C -Continuous T = 100 C (Note 5) 32 C I A D -Continuous T = 25 C (Note 1a) 10 A -Pulsed (Note 4) 187 E Single Pulse Avalanche Energy (Note 3) 96 mJ AS Power Dissipation T = 25 C 63 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.0 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86183 FDMS86183 Power 56 13 12 mm 3000 units Semiconductor Components Industries, LLC, 2016 Publication Order Number: November, 2016, Rev. 1.0 FDMS86183/D 1